PART |
Description |
Maker |
RFP-10N50TV |
Aluminum Nitride Terminations
|
Anaren Microwave
|
RFP-250375N6X50-2 |
Aluminum Nitride Terminations
|
Anaren Microwave
|
RFP-100200N4Z50-2 |
Aluminum Nitride Terminations 10 Watts, 50ohm
|
Anaren Microwave
|
AML1416P4511 |
Gallium Nitride (GaN)
|
Microsemi
|
NPT2020 |
Gallium Nitride 48V, 50W, DC-3.5 GHz HEMT
|
M/A-COM Technology Solutions, Inc. M/A-COM Technology Solution...
|
NPT25100 |
Gallium Nitride 28V, 125W RF Power Transistor
|
M/A-COM Technology Solutions, Inc.
|
NPT2019 |
Gallium Nitride 48V, 25W, DC-6 GHz HEMT
|
M/A-COM Technology Solutions, Inc.
|
MFE201 MFE202 MFE203 |
N-CHANNEL DUAL-GAE SILICON-NITRIDE PASSIVATED MOS FIELD-EFFECT TRANSISTORS
|
Motorola, Inc
|
MFE211 MFE212 |
N-CHANNEL DUAL GATE SILICON NITRIDE PASSIVATED MOS FIELD EFFECT TRANSISTORS
|
Digitron Semiconductors
|
DS1808 |
Process: 1P, 1M, 5.0um, 30V NF & PF, UVNd, UVPd ,N ESD,TEOS Spacer, Passivation w/Nov TEOS Oxide-Nitride 双路对数数字电位 Process: 1P, 1M, 5.0um, 30V NF & PF, UVNd, UVPd ,N ESD,TEOS Spacer, Passivation w/Nov TEOS Oxide-Nitride
|
Maxim Integrated Products, Inc. MAXIM[Maxim Integrated Products]
|
|