| PART |
Description |
Maker |
| 2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification
Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor
http://
|
| UPA1724 UPA1724G PA1724 UPA1724G-E1 UPA1724G-E2 |
N-channel enhancement type power MOS FET
MOS Field Effect Transistor
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
10 A, 20 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NEC[NEC]
|
| SSM6J07FU |
Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Transistor Silicon P Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor]
|
| HAT2035R HAT2035R-EL-E |
0.5 A, 150 V, 5.5 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Silicon N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| MP4410 |
POWER MOS FET MODULE SILICON N CHANNEL MOS TYPE
|
Toshiba Semiconductor
|
| HAT2202C HAT2202C-15 |
Silicon N Channel MOS FET powerswitching
Silicon N Channel MOS FET Power Switching
|
Renesas Electronics Corporation
|
| TPH12008NH |
MOSFETs Silicon N-channel MOS (U-MOS
DC-DC Converters Switching Voltage Regulators Motor Drivers
MOSFETs Silicon N-channel MOS (U-MOS
|
Toshiba Semiconductor
|
| 2SK1310A EA09774 |
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
From old datasheet system
RF POWER MOS FET for UHF TV ROADCAST TRANSMITTER
|
Toshiba Semiconductor
|
| RJK1212DNS-00-J5 |
Silicon N Channel Power MOS FET Power Switching
3 A, 120 V, 0.34 ohm, N-CHANNEL, Si, POWER, MOSFET 3.10 X 2.90 MM, HALOGEN AND LEAD FREE, PLASTIC, HWSON-8
|
Renesas Electronics Corporation
|
| 2SK833 |
FAST SWITCHING N-CHANNEL SILICON POWER MOS FET
Fast switching N-channel silicon MOS field effect power transistor.
|
NEC
|
| RJK0206DPA RJK0206DPA-00-J53 |
70 A, 25 V, 0.0025 ohm, N-CHANNEL, Si, POWER, MOSFET HALOGEN AND LEAD FREE, WPAK(2), 8 PIN
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
|
Renesas Electronics Corporation
|
