| PART |
Description |
Maker |
| 157AVG063MGBJ 397AVG035MGBJ 126AVG160MGBJ 337AVG01 |
Small Size - High Temperature ?Low ESR ?High Ripple Current ?Stable with Temperature ?High Frequency
|
Illinois Capacitor, Inc...
|
| W0603HT-01-100R-G W0603HT-01-100R-J W1206HT-01-100 |
High Temperature TaNFilm㈢ Chip Resistors
High Temperature TaNFilm垄莽 Chip Resistors
High Temperature TaNFilm? Chip Resistors
High Temperature TaNFilmChip Resistors RESISTOR, METAL FILM, 0.1 W, 1 %, 100 ppm, 100 ohm, SURFACE MOUNT, 0805
High Temperature TaNFilmChip Resistors RESISTOR, METAL FILM, 0.0625 W, 5 %, 100 ppm, 100 ohm, SURFACE MOUNT, 0603
High Temperature TaNFilmChip Resistors RESISTOR, METAL FILM, 0.125 W, 2 %, 100 ppm, 100 ohm, SURFACE MOUNT, 1206
|
Welwyn Components Limited
TT Electronics / Welwyn
Welwyn Components, Ltd.
Welwyn Components Limit...
|
| BZG05C BZG05C10 BZG05C100 BZG05C11 BZG05C12 BZG05C |
High Precision 10 V Reference; Package: CHIPS OR DIE; No of Pins: 8; Temperature Range: Commercial 硅的Z -二极
High Precision 10 V Reference; Package: PDIP; No of Pins: 8; Temperature Range: Commercial 硅的Z -二极
2.5 V/3.0 V Ultrahigh Precision Bandgap Voltage Reference; Package: PDIP; No of Pins: 8; Temperature Range: Industrial 硅的Z -二极
High Precision 10 V Reference; Package: SOIC; No of Pins: 8; Temperature Range: Commercial 硅的Z -二极
Silicon Z-Diodes 硅的Z -二极
High Precision 10 V Reference; Package: CerDIP; No of Pins: 8; Temperature Range: Military
Silicon Z-Diode(稳压应用电压范围3.3-100V的齐纳二极管)
From old datasheet system
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
Vishay Telefunken
|
| MPXV5050VC6T1 |
High Temperature Accuracy Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated
|
FREESCALE[Freescale Semiconductor, Inc]
|
| ENC102D-10A ENC112D-10A ENC820D-10A ENC220D-10B EN |
±15kV ESD Protected, 5V, Low Power, High Speed and Slew Rate Limited, Full Duplex, RS-485/RS-422 Transceivers; Temperature Range: -40°C to 85°C; Package: 14-SOIC T&R
Ultra Low ON-Resistance, 1.65V to 4.5V, Single Supply, Quad SPDT (Dual DPDT) Analog Switch; Temperature Range: -40°C to 85°C; Package: 16-QFN
Dual LDO with Low Noise, Very High PSRR, and Low IQ; Temperature Range: -40°C to 85°C; Package: 10-DFN
STD MOV
Dual LDO with Low Noise, Very High PSRR, and Low IQ; Temperature Range: -40°C to 85°C; Package: 10-DFN 性病检验手
|
Central Semiconductor, Corp.
|
| T2035H07 T2035H-6I-TR T2050H-6I-TR T2050H-6G-TR T2 |
600 V, 20 A, SNUBBERLESS TRIAC
High temperature 20 A Snubberless TRIACs
High temperature 20 A Snubberless⑩ TRIACs
|
STMicroelectronics
|
| AH175-WL-B-A AH175-WL-B-B AH175-PL-B-A AH175-PL-B- |
HALL EFFECT LATCH FOR HIGH TEMPERATURE MAGNETIC FIELD SENSOR-HALL EFFECT, -6-6mT, 400mV, RECTANGULAR, THROUGH HOLE MOUNT
HALL EFFECT LATCH FOR HIGH TEMPERATURE 霍尔效应锁存高温
|
Diodes, Inc.
磁阻传感
DIODES[Diodes Incorporated]
Diodes Inc.
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| TZ150N22KOF TZ150N18KOF TZ150N24KOF TZ150N26KOC |
High junction temperature Transil 晶闸管模块|可控硅| 2.2KV五（无线资源管理）| 223A我（翻译
High junction temperature Transil 晶闸管模块|可控硅| 1.8KV五（无线资源管理）| 223A我（翻译
High junction temperature Transil 晶闸管模块|可控硅| 2.4KV五（无线资源管理）| 223A我（翻译
High junction temperature Transil 晶闸管模块|可控硅| 2.6KV五（无线资源管理）| 223A我（翻译
|
Infineon Technologies AG
|
| NRT335M06 NRA155M25 NRB474K25 NRC473K16 NRC473K20 |
High-Temperature Durability 高温耐久
R Series Chip
High-Temperature Durability
|
Electronic Theatre Controls, Inc.
ETC
List of Unclassifed Manufacturers
http://
NEC
List of Unclassifed Man...
|
| SS2PH9-E3_84A SS2PH9-E3_85A SS2PH9HE3_84A SS2PH9HE |
High-Voltage Surface Mount Schottky Barrier Rectifiers High Barrier Technology for Improved High Temperature Performance
|
Vishay Siliconix
|
|
