| PART |
Description |
Maker |
| BLF872 BLF872-2015 |
UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors
Quanzhou Jinmei Electro...
|
| BLF4G20LS-110B |
From old datasheet system
UHF power LDMOS transistor 110 W LDMOS power transistor for base station applications at frequencies
|
Philips Semiconductors
NXP Semiconductors N.V.
|
| BLF3G21-30 |
30 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz.
UHF power LDMOS transistor BLF3G21-30<SOT467C (SOT467C)|<<http://www.nxp.com/packages/SOT467C.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| BLF871S112 BLF871-15 |
A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications.
UHF power LDMOS transistor
|
NXP Semiconductors N.V.
|
| BLF6G20-45 |
UHF power LDMOS transistor
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BLF4G10S-120 |
UHF power LDMOS transistor
|
NXP Semiconductors N.V.
|
| BLF861A BLF861A-2015 |
UHF power LDMOS transistor
|
Quanzhou Jinmei Electronic ...
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| BLF8811012 BLF881-15 |
UHF power LDMOS transistor
|
NXP Semiconductors
|
| BLF879P |
UHF power LDMOS transistor
|
NXP Semiconductors
|
| BLF2022-30 |
UHF power LDMOS transistor
|
NXP Semiconductors
Philips Semiconductors
|
| BLF861A |
UHF POWER LDMOS TRANSISTOR
|
ASI[Advanced Semiconductor]
|
| BLF647 BLF647_3 BLF647-2015 |
From old datasheet system
UHF power LDMOS transistor
|
Quanzhou Jinmei Electro...
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
