| PART |
Description |
Maker |
| QM100HA-H QM100HY-H |
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| VUB120-12NO2 VUB120-16NO2 VUB160-16NO2 VUB160-12NO |
Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System 140 A, 1200 V, N-CHANNEL IGBT
Power Modules/Rectifier Bridge Modules: Three Phase Bridges with Dynamic Brake IGBT
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| VUB145 VUB145-16NO1 VUB116 VUB116-16NO1 |
Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System 95 A, 1200 V, N-CHANNEL IGBT
Power Modules/Rectifier Bridge Modules: Three Phase Bridges with Dynamic Brake IGBT
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| CM300DU-24H09 |
IGBT MODULES HIGH POWER SWITCHING USE
|
Mitsubishi Electric Semiconductor
|
| CM1000DU-34NF09 |
IGBT MODULES HIGH POWER SWITCHING USE
|
Mitsubishi Electric Semiconductor
|
| CM100RX-12A |
IGBT MODULES HIGH POWER SWITCHING USE
|
Mitsubishi Electric Semiconductor
|
| CM300DU-12F09 |
IGBT MODULES HIGH POWER SWITCHING USE
|
Mitsubishi Electric Semiconductor
|
| CM400DY-24A09 CM400DY-24A |
IGBT MODULES HIGH POWER SWITCHING USE
|
Mitsubishi Electric Semiconductor
|
| CM300DY-34A09 |
IGBT MODULES HIGH POWER SWITCHING USE
|
Mitsubishi Electric Semiconductor
|
| CM600HU-24F09 |
IGBT MODULES HIGH POWER SWITCHING USE
|
Mitsubishi Electric Semiconductor
|
