| PART |
Description |
Maker |
| GS1A-L13 |
1.0 Amp Glass Passivated Rectifier 50 to 1000 Volts Extremely Low Thermal Resistance
|
Micro Commercial Components
Micro Commercial Compon...
|
| FZT853 |
Extremely low equivalent on-resistance; RCE(sat) 44mù at 5A, 6 Amps continuous current, up to 20 Amps peak current
|
TY Semiconductor Co., Ltd
|
| IRF7702GPBF IRF7703GPBF |
HEXFETPower MOSFET Ultra Low On-Resistance 1.8V Rated
Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile (1.2mm) Available in Tape & Reel Lead-Free Halogen-Free
|
International Rectifier
|
| STY16NA90 6004 |
N - CHANNEL 900V - 0.5 ohm - 16A - Max247 EXTREMELY LOW GATE CHARGE POWER MOSFET
From old datasheet system
N - CHANNEL 900V - 0.5 - 16A - Max247 EXTREMELY LOW GATE CHARGE POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| PMV56XN PMV56XN-01 |
uTrenchMOS (tm) extremely low level FET
From old datasheet system
mTrenchMOS extremely low level FET
|
Philips
|
| GFC240 |
N Channel Power MOSFET with extremely low RDS(on)
|
Gunter Seniconductor GmbH.
|
| STY16NA90 |
N-CHANNEL 900 V - 0.5 OHM - 16 A - EXTREMELY LOW GATE CHARGE POWER MOSFET
|
ST Microelectronics
|
| PMV31XN PMV31XN-01 |
uTrenchMOS (tm) extremely low level FET
UTrenchMOS extremely low level FET
From old datasheet system
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| PMGD370XN |
Dual N-channel uTrenchmos (tm) extremely low level FET
Dual N-channel mTrenchMOS-TM extremely low level FET
|
Philips Semiconductors
|
| IPW65R041CFD |
extremely low losses due to very low fom rdson qg and eoss
|
Infineon Technologies AG
|
| HT9274 9274 |
Power Resistor; Series:TGH; Resistance:5kohm; Resistance Tolerance: /- 5 %; Power Rating:200W; Mounting Type:Chasis/Heat-Sink; Packaging:Bulk
Quad Micropower Op Amp
From old datasheet system
|
Holtek Semiconductor Inc.
|
