| PART |
Description |
Maker |
| 126254 |
GaAlAs / GaAlAs LED Chips (substrate removed)
|
OSA Opto Light GmbH
|
| 127141D |
GaAlAs / GaAlAs LED Chips (substrate removed)
|
OSA Opto Light GmbH
|
| 124141H |
GaAlAs / GaAlAs LED Chips (substrate removed)
|
OSA Opto Light GmbH
|
| 190150 |
GaAlAs / GaAlAs LED Chips (substrate removed)
|
OSA Opto Light GmbH
List of Unclassifed Manufacturers
|
| 127141N |
GaAlAs / GaAlAs Chips (substrate removed)
|
OSA Opto Light GmbH
|
| 128254 |
GaAlAs / GaAlAs Chips (substrate removed)
|
OSA Opto Light GmbH
|
| 190130 |
GaAlAs / GaAs LED Chips
|
OSA Opto Light GmbH
|
| SFH4391 |
Schnelle GaAlAs-IR-Lumineszenzdiode High-Speed GaAlAs Infrared Emitter
From old datasheet system
|
Infineon
|
| TSAL4400 |
GaAs/GaAlAs IR Emitting Diode in 3 mm (T.1) Package 砷化红外发光二极管的GaAIAs呢？3毫米（T.1）包
GaAs/GaAlAs IR Emitting Diode in ?3 mm (T.1) Package
From old datasheet system
GaAs/GaAlAs IR Emitting Diode in ? 3 mm (T?1)Package
GaAs/GaAlAs IR Emitting Diode in 3 mm (T.1) Package
GaAs/GaAlAs IR Emitting Diode in 庐3 mm (T.1) Package
GaAs/GaAlAs IR Emitting Diode in ?3 mm (T.1) Package
|
Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
Vishay Telefunken
|
| SFH464E7800 SFH464 Q62702-Q1745 |
GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode 660 nm 发动器，Lumineszenzdiode 660纳米发光二极管的GaAIAs 660纳米
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
