| PART |
Description |
Maker |
| MB81ES173225-15-X MB81ES171625-15-X E511408 MB81ES |
SINGLE DATA RATE I/F FCRAM Consumer/Embedded Application Specific Memory for SiP
From old datasheet system
Consumer FCRAM
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FUJITSU[Fujitsu Media Devices Limited]
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| AM7200-35RC AM7200-35JC AM7200-35PC AM7200-50JC AM |
HIGH DENSITY FIRST-IN FIRST-OUT (FIFO) 256 X 9-BIT CMOS MEMORY 256 X 9 OTHER FIFO, 25 ns, PDIP28
HIGH DENSITY FIRST-IN FIRST-OUT (FIFO) 256 X 9-BIT CMOS MEMORY 256 X 9 OTHER FIFO, 50 ns, PDIP28
Circular Connector; No. of Contacts:13; Series:MS27508; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:10; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle RoHS Compliant: No
JT 13C 13#22D PIN WALL RECP
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ADVANCED MICRO DEVICES INC
Advanced Micro Devices, Inc.
|
| P1753-20GMB P1753-20PGMB P1753-30GMB P1753-30PGMB |
SINGLE CHIP, 40MHz CMOS MMU/COMBO 16-BIT, 256 PAGES, MEMORY MANAGEMENT UNIT, CDSO64
SINGLE CHIP, 40MHz CMOS MMU/COMBO 16-BIT, 256 PAGES, MEMORY MANAGEMENT UNIT, CPGA68
SINGLE CHIP, 40MHz CMOS MMU/COMBO 16-BIT, 256 PAGES, MEMORY MANAGEMENT UNIT, CQFP68
SINGLE CHIP, 40MHz CMOS MMU/COMBO 16-BIT, 256 PAGES, MEMORY MANAGEMENT UNIT, DIP64
16-BIT, 256 PAGES, MEMORY MANAGEMENT UNIT, CDIP64
|
Pyramid Semiconductor, Corp.
PERFORMANCE SEMICONDUCTOR CORP
|
| MB82DBS16164A-80L |
256 Mbit Mobile FCRAM 1.8 V, SDR Burst Mode
|
Fujitsu Media Devices Limited
|
| S29PL127N65GAWW02 S29PL127N65GAW003 S29PL127N65GAI |
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 8M X 16 FLASH 3V PROM, 65 ns, PBGA64
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 256/128/128字节6/8/8 M中的x 16位）.0伏的CMOS只同步读/写，页模式闪
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 8M X 16 FLASH 3V PROM, 70 ns, PBGA64
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 16M X 16 FLASH 3V PROM, 70 ns, PBGA84
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 16M X 16 FLASH 3V PROM, 65 ns, PBGA84
|
Spansion, Inc.
Spansion Inc.
SPANSION LLC
|
| AM29LV102BB-90FEB AM29LV102BB-70FEB AM29LV102BT-12 |
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory 256K X 8 FLASH 3V PROM, 70 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory 256K X 8 FLASH 3V PROM, 90 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory 256K X 8 FLASH 3V PROM, 120 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory 2兆位56亩8位）.0伏的CMOS只，引导扇区32引脚闪存
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory 2兆位56亩8位）3.0伏的CMOS只，引导扇区32引脚闪存
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory 256K X 8 FLASH 3V PROM, 70 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory 2兆位256亩8位）.0伏的CMOS只，引导扇区32引脚闪存
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory 256K X 8 FLASH 3V PROM, 90 ns, PQCC32
|
Advanced Micro Devices, Inc.
|
| MB84SF6H6H6L2-70PBS MB84SF6H6H6L2-70 |
3 Stacked MCP (Multi-Chip Package) FLASH & FLASH & FCRAM 128M (X16) Burst FLASH MEMORY & 128M (X16) Page/Burst Mobile FCRAM
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SPANSION[SPANSION]
|
| AM29LV400B AM29LV400BB120EC AM29LV400BB120ECB AM29 |
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
FEEDTHRU CAPACITOR, 47PF 3A 100VFEEDTHRU CAPACITOR, 47PF 3A 100V; Capacitance:0.047nF; Voltage rating, DC:100V; Capacitor dielectric type:Ceramic Multi-Layer; Tolerance, :50%; Tolerance, -:20%; Temp, op. max:125(degree C); Temp, op.
Ceramic Multilayer Capacitor; Capacitance:470pF; Capacitance Tolerance: 50, -20 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:1206; Series:W3F; Leaded Process Compatible:Yes
Am29LV400B KGD (Known Good Die Supplement)
INNOLINE: High Voltage Input Series - For Telecom DSM, XDSL, Aplication- Internal Pi Filter- Multi-Outputs- Overcurrent Protection- High Efficiency to 80% 4兆位12亩x 8-Bit/256亩x 16位）.0伏的CMOS只引导扇区闪
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 4兆位12亩x 8-Bit/256亩x 16位）.0伏的CMOS只引导扇区闪
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 256K X 16 FLASH 3V PROM, 120 ns, PBGA48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 256K X 16 FLASH 3V PROM, 120 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 4兆位12x 8-Bit/256x 16位）.0伏的CMOS只引导扇区闪
CAP CERM 2.2UF 4V X7R 0612 20% 4兆位12亩x 8-Bit/256亩x 16位）.0伏的CMOS只引导扇区闪
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 8 FLASH 3V PROM, 70 ns, PDSO48
|
http://
AMD[Advanced Micro Devices]
Advanced Micro Devices, Inc.
Electronic Theatre Controls, Inc.
|
| 28F256 AM28F256-150FCB AM28F256-120FE AM28F256-120 |
Octal bus transceivers 20-SOIC 0 to 70
Serial-out shift registers with input latches 16-SOIC 0 to 70
Octal bus transceivers 20-PDIP 0 to 70
Serial-out shift registers with input latches 16-PDIP 0 to 70
Voltage-controlled oscillator 14-SOIC 0 to 70
Serial-out shift registers with input latches 16-SO 0 to 70
Shift registers with input latches 20-SOIC 0 to 70
Dual voltage-controlled oscillators 16-SOIC 0 to 70
Dual voltage-controlled oscillators 16-PDIP 0 to 70
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 32K X 8 FLASH 12V PROM, 90 ns, PDSO32
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 32K X 8 FLASH 12V PROM, 90 ns, PQCC32
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 32K X 8 FLASH 12V PROM, 70 ns, PDSO32
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 32K X 8 FLASH 12V PROM, 70 ns, PDIP32
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 32K X 8 FLASH 12V PROM, 70 ns, PQCC32
Voltage-controlled oscillator 14-PDIP 0 to 70 32K X 8 FLASH 12V PROM, 150 ns, PDIP32
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 32K X 8 FLASH 12V PROM, 150 ns, PDIP32
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256千比特（32亩8位）的CMOS 12.0伏，整体擦除闪存
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory
Voltage-controlled oscillator 14-PDIP 0 to 70 32K X 8 FLASH 12V PROM, 200 ns, PQCC32
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 32K X 8 FLASH 12V PROM, 90 ns, PDIP32
Octal bus transceivers with open collector outputs 20-SOIC 0 to 70
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| AM42DL1614DT45IT AM42DL1614DB45IT AM42DL1614DB35IT |
Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM Am29DL16xD 16兆位2米8 1个M x 16位）.0伏的CMOS只，同时作业闪存兆位256亩16位），静态存储器
Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM Am29DL16xD 16兆位米8 1个M x 16位）.0伏的CMOS只，同时作业闪存兆位56亩16位），静态存储器
Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM SPECIALTY MEMORY CIRCUIT, PBGA69
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| MB84VD23481FJ-70PBS MB84VD23481FJ-70 |
64 M (】16) FLASH MEMORY & 32 M (】16) Mobile FCRAM
|
SPANSION[SPANSION]
|
| MB85R200108 MB85R2001PFTN-GE1 MB85R2001 |
Memory FRAM CMOS 2 M Bit (256 K 隆驴 8)
Memory FRAM CMOS 2 M Bit (256 K 】 8)
Memory FRAM CMOS 2 M Bit (256 K × 8)
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Fujitsu Component Limit...
Fujitsu Component Limited.
Fujitsu Media Devices Limited
http://
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