| PART |
Description |
Maker |
| BDX84A BDX54 BDX54A BDX54B |
DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS
Trans Darlington PNP 60V 8A 3-Pin(3 Tab) TO-220
|
New Jersey Semi-Conductor P...
New Jersey Semiconductors
New Jersey Semi-Conduct...
|
| SE9404 SE9405 SE9403 SE9303 SE9304 SE9305 |
Leaded Power Transistor Darlington
SILICON POWER DARLINGTON COMPLEMENTARY TRANSISTORS
|
CENTRAL[Central Semiconductor Corp]
|
| TIP142 TIP147 TIP146 TIP145 TIP141 TIP140 4132 |
Complemetary Silicon Power Darlington Transistors(浜?ˉ纭????揪??】?朵?绠?
From old datasheet system
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
|
STMicro
|
| BDX88C BDX87C -BDX87C |
Complemetary Silicon Power Darlington Transistors(???杈炬?椤挎?浣??)
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
Complemetary Silicon Power Darlington Transistors(功率达林顿晶体管)
|
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| CZT122 CZT127 |
SMD Bipolar Power Transistor PNP Darlington
SMD Bipolar Power Transistor NPN Darlington
SURFACE MOUNT COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR
|
Central Semiconductor Corp
|
| MJ2500 MJ3000 MJ1250 MJ3001 |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
10 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.80 VOLTS 150 WATTS
|
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| TIP121 TIP120 TIP127 TIP122 TIP126 TIP125 ON2979 |
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| 2SK3338-01 |
TRANS PREBIASED PNP 200MW SOT323
N-CHANNEL SILICON POWER MOS-FET
|
FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
|
| FJP9100 FJP9100TU |
NPN Silicon Darlington Transistor
High Voltage Power Darlington Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
| MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS
COMPLEMETARY SILICON POWER TRANSISTORS
SILICON NPN TRANSISTOR
HIGH VOLTAGE PNP POWER TRANSISTOR
SILICON NPN POWER DARLINGTON TRANSISTOR
RF Power Field Effect Transistors
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
RF LDMOS Wideband Integrated Power Amplifiers
GENERAL PURPOSE L TO X-BAND GaAs MESFET
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE
NEC
STMICROELECTRONICS[STMicroelectronics]
|
