PART |
Description |
Maker |
M53D128168A-7.5BAIG M53D128168A1 M53D128168A-10BAI |
2M x 16 Bit x 4 Banks Mobile DDR SDRAM
|
Elite Semiconductor Memory Technology Inc.
|
M52S64322A-10BG M52S64322A M52S64322A-7.5BG |
512K x 32 Bit x 4 Banks Mobile Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
MT46H16M16LFBF-6ITH MT46H8M32LGB5-75ITA |
Mobile DDR SDRAM MT46H16M16LF ?4 Meg x 16 x 4 banks MT46H8M32LF/LG ?2 Meg x 32 x 4 banks 8M X 32 DDR DRAM, 6 ns, PBGA90
|
Micron Technology
|
K4S51153LF K4S51163LF-YPC_L_F1H K4S51163LF-YPC_L_F |
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
|
Samsung Electronic SAMSUNG SEMICONDUCTOR CO. LTD.
|
K4M64163PH-RG K4M64163PH K4M64163PH-RBF1L K4M64163 |
1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP 100万16 × 4银行4CSP移动SDRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
K4M563233E-N K4M563233E K4M563233E-C K4M563233E-E |
2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA 2米x 32Bit的4银行0FBGA移动SDRAM 8M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
K4M28323PH-F K4M28323PH-FC_F K4M28323PH-FE_G K4M28 |
4M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90 LEAD FREE, FBGA-90 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
|
Elite Semiconductor Memory Technology, Inc. Samsung semiconductor
|
K4M56323LE-MS80 K4M56323LE K4M56323LE-EC1H K4M5632 |
2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA 2米x 32Bit的4银行0FBGA移动SDRAM RES 180K 5% 0603 Surface Mount Resistors Thick Film Chip Resistors
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
|
MT48LC4M16A2B4-6AITJ MT48LC4M16A2B4-75 MT48LC4M16A |
SDR SDRAM MT48LC16M4A2 ?4 Meg x 4 x 4 Banks MT48LC8M8A2 ?2 Meg x 8 x 4 Banks MT48LC4M16A2 ?1 Meg x 16 x 4 Banks
|
Micron Technology
|
MT48LC16M16A2P-75DTR |
SDR SDRAM MT48LC64M4A2 ?16 Meg x 4 x 4 banks MT48LC32M8A2 ?8 Meg x 8 x 4 banks MT48LC16M16A2 ?4 Meg x 16 x 4 banks
|
Micron Technology
|