| PART |
Description |
Maker |
| E28 E116 E113 E30 E106 E103 E105 E112 E209 E3 E100 |
Yellow, mini LED. Lens translucent. Luminous intensity at 10mA: 2.0mcd(min), 3.5mcd(max). Forward voltage at 20mA: 2.1V(typ), 2.5V(max).
Orange InGaAIP, T-1 3/4, ultra bright LED. Lens orange translucent. Luminous intensity at 20mA: 700mcd(min), 3000mcd(max). Forward voltage at 20mA: 1.8V(typ), 2.3V(max).
Super bright green, mini LED. Lens translucent. Luminous intensity at 10mA: 10.0mcd(min), 16.0mcd(max). Forward voltage at 20mA: 2.2V(typ), 2.5V(max).
Green T-1, right angle LED(3mm). Lens diffused. Luminous intensity at 10mA: 5.0mcd(typ), 20.0mcd(max). Forward voltage at 20mA: 2.2V(typ), 2.5V(max).
Red T-1, right angle LED(3mm). Lens diffused. Luminous intensity at 10mA: 12.5mcd(typ), 32.0mcd(max). Forward voltage at 20mA: 2.0V(typ), 2.5V(max).
T-1 bright white LED / Lens clear
Miniature LEDs 微型发光二极
Orange, mini LED. Lens translucent. Luminous intensity at 10mA: 3.0mcd(min), 7.0mcd(max). Forward voltage at 20mA: 2.0V(typ), 2.6V(max).
Yellow T-1, right angle LED(3mm). Lens diffused. Luminous intensity at 10mA: 5.0mcd(typ), 20.0mcd(max). Forward voltage at 20mA: 2.1V(typ), 2.5V(max).
High efficiency red, mini LED. Lens translucent. Luminous intensity at 10mA: 4.0mcd(min), 7.0mcd(max). Forward voltage at 20mA: 2.0V(typ), 2.5V(max)(max).
Ultra bright red, mini LED. Lens translucent. Luminous intensity at 10mA: 20.0mcd(min), 60.0mcd(max). Forward voltage at 20mA: 1.85V(typ), 2.5V(max)(max).
Yellow InGaAIP, T-1 3/4, ultra bright LED. Lens yellow translucent. Luminous intensity at 20mA: 400mcd(min), 1600mcd(max). Forward voltage at 20mA: 2.0V(typ), 2.5V(max).
|
Gilway Technical Lamp
International Light Technologies Inc.
International Light Technologies, Inc.
|
| AIDL9 AIDL45 AIDL5J SIDM17 SIDM13 HCMDL20 ACMDL20G |
Logic IC
10-Bit, 125Msps Low Noise 3V ADCs; Package: QFN; No of Pins: 32; Temperature Range: 0°C to 70°C
Small-Signal MOS FETs (Dual); Surface Mount Type: Y; Package: UF6; Number of Pins: 6; Internal connection: Independent; V_DS(Q1), max (V): (max 30); V_GSS(Q1), max (V): (max ±12); I_D Q1, max (mA): (max 500)
Small-Signal MOS FETs (Dual); Surface Mount Type: Y; Package: ES6; Number of Pins: 6; Internal connection: Independent; V_DS(Q1), max (V): (max 20); V_GSS(Q1), max (V): (max /-10); I_D Q1, max (mA): (max 100)
Small-Signal MOS FETs (Dual); Surface Mount Type: Y; Package: US6; XJE016 JEITA: SC-88; Number of Pins: 6; Internal connection: Independent; Comments
Frequency Switching Power Transistor; Application Scope: switching; Part Number: 2SA1736; H_FE: (min 120 @V_CE=2V, I_C=0.1A) (max 400 @V_CE=2V, I_C=0.1A)
Junction FETs (Single); Surface Mount Type: Y; Package: VESM2; Number of Pins: 3; Comments: General-purpose; I_DSS, min (mA): (min 0.08) (max 0.48); I_DSS, max (mA): (min 1.4); |Yfs|, min (mS): (max -20)
High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: Y; Package: PW-MOLD; Number Of Pins: 3; Publication Class: High Frequency Switching Power Transistor; Application Scope: power amplification; Part Number: 2SA1241 逻辑IC
Small-Signal MOS FETs (Dual); Surface Mount Type: Y; Package: US6; XJE016 JEITA: SC-88; Number of Pins: 6; Internal connection: Independent; V_DS(Q1), max (V): (max 30); V_GSS(Q1), max (V): (max /-20); I_D Q1, max (mA): (max 400) 逻辑IC
High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: LSTM; Number Of Pins: 3; Viewing Angle: radial taping; Publication Class: High Frequency Switching Power Transistor; Part Number: 2SA966 逻辑IC
Junction FETs (Single); Surface Mount Type: N; Package: MINI; Number of Pins: 3; Comments: General-purpose; I_DSS, min (mA): (min 5) (max 30); I_DSS, max (mA): (min 25); |Yfs|, min (mS): (max -40) 逻辑IC
Junction FETs (Single); Surface Mount Type: N; Package: MINI; Number of Pins: 3; Comments: Low-noise; I_DSS, min (mA): (min 0.3) (max 6.5); I_DSS, max (mA): (min 1.2); |Yfs|, min (mS): (max -50)
|
Bourns, Inc.
ANADIGICS, Inc.
ITT, Corp.
|
| TO-263-5 |
A : MIN 9.800 MAX 10.668 B : MIN 8.200 MAX 9.169
|
Analog Microelectronics
|
| 15KPJ45 15KPJ45A 15KPJ45C 15KPJ45CA 15KPJ58 15KPJ5 |
Glass passivated junction transient voltage suppressor. Vrwm = 210 V. Vbr(min/max) = 231/296.1 V @ It = 1.0 mA. Ir = 5 uA. Vc = 376 V @ Ipp = 40 A.
Glass passivated junction transient voltage suppressor. Vrwm = 190 V. Vbr(min/max) = 209/243.2 V @ It = 1.0 mA. Ir = 5 uA. Vc = 308 V @ Ipp = 49 A.
Glass passivated junction transient voltage suppressor. Vrwm = 220 V. Vbr(min/max) = 242/310.2 V @ It = 1.0 mA. Ir = 5 uA. Vc = 394 V @ Ipp = 38 A.
Glass passivated junction transient voltage suppressor. Vrwm = 110 V. Vbr(min/max) = 122/154.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 196 V @ Ipp = 77 A.
Glass passivated junction transient voltage suppressor. Vrwm = 160 V. Vbr(min/max) = 178/205.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 259 V @ Ipp = 58 A.
Glass passivated junction transient voltage suppressor. Vrwm = 160 V. Vbr(min/max) = 178/226.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 287 V @ Ipp = 52 A.
Glass passivated junction transient voltage suppressor. Vrwm = 130 V. Vbr(min/max) = 144/182.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 231 V @ Ipp = 65 A.
Glass passivated junction transient voltage suppressor. Vrwm = 120 V. Vbr(min/max) = 133/169.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 214 V @ Ipp = 70 A.
GLASS PASSIVATED JUNCTION TRANSIENT (VOLTAGE SUPPRESSOR VOLTAGE- 17 to 220 Volts 15000 Watt Peak Pulse Power) 玻璃钝化结瞬态（电压抑制电压20伏特175000脉冲峰值功率）
GLASS PASSIVATED JUNCTION TRANSIENT (VOLTAGE SUPPRESSOR VOLTAGE- 17 to 220 Volts 15000 Watt Peak Pulse Power) 玻璃钝化结瞬态（电压抑制电压20伏特75000脉冲峰值功率）
GLASS PASSIVATED JUNCTION TRANSIENT (VOLTAGE SUPPRESSOR VOLTAGE- 17 to 220 Volts 15000 Watt Peak Pulse Power) 玻璃钝化结瞬态（电压抑制电压220伏特75000脉冲峰值功率）
Glass passivated junction transient voltage suppressor. Vrwm = 120 V. Vbr(min/max) = 133/153.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 193 V @ Ipp = 78 A.
Glass passivated junction transient voltage suppressor. Vrwm = 130 V. Vbr(min/max) = 144/165.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 209 V @ Ipp = 72 A.
Glass passivated junction transient voltage suppressor. Vrwm = 170 V. Vbr(min/max) = 189/217.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 275 V @ Ipp = 55 A.
Glass passivated junction transient voltage suppressor. Vrwm = 110 V. Vbr(min/max) = 122/140.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 177 V @ Ipp = 85 A.
Glass passivated junction transient voltage suppressor. Vrwm = 170 V. Vbr(min/max) = 189/239.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 304 V @ Ipp = 49 A.
Glass passivated junction transient voltage suppressor. Vrwm = 190 V. Vbr(min/max) = 209/267.4 V @ It = 1.0 mA. Ir = 5 uA. Vc = 340 V @ Ipp = 44 A.
Glass passivated junction transient voltage suppressor. Vrwm = 210 V. Vbr(min/max) = 231/296.1 V @ It = 1.0 mA. Ir = 5 uA. Vc = 340 V @ Ipp = 44 A.
|
Pan Jit International I...
PANJIT[Pan Jit International Inc.]
PanJit International Inc.
PanJit International, Inc.
|
| BCP51115 |
45 V, 1 A PNP medium power transistors - Complement: BCP54 ; fT min: 115 MHz; hFE max: 250 ; hFE min: 40 ; I<sub>C</sub> max: 1000 mA; Polarity: PNP ; Ptot max: 1300 mW; VCEO max: 45 V; Package: SOT223 (SC-73); Container: Tape reel smd
|
NXP SEMICONDUCTORS
|
| NX8563LF646-BA NX8563LB646-BA NX8563LB6040-BA NX85 |
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1564.67 nm. Frequency 191.60 THz. FC-PC connector. Anode floating.
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1564.67 nm. Frequency 191.60 THz. FC-PC connector. Anode ground.
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1604.02 nm. Frequency 186.90 THz. FC-PC connector. Anode ground.
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1604.88 nm. Frequency 186.80 THz. FC-PC connector. Anode ground.
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1559.78 nm. Frequency 192.20 THz. FC-PC connector. Anode floating.
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1529.55 nm. Frequency 196.00 THz. FC-PC connector. Anode ground.
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1590.41 nm. Frequency 188.50 THz. FC-PC connector. Anode floating.
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1602.31 nm. Frequency 187.10 THz. FC-PC connector. Anode ground.
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1538.07 nm. Frequency 194.80 THz. FC-PC connector. Anode floating.
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1553.32 nm. Frequency 193.00 THz. FC-PC connector. Anode floating.
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1581.18 nm. Frequency 189.60 THz. FC-PC connector. Anode ground.
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1581.18 nm. Frequency 189.60 THz. FC-PC connector. Anode floating.
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1587.04 nm. Frequency 188.90 THz. FC-PC connector. Anode floating.
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1569.59 nm. Frequency 191.00 THz. FC-PC connector. Anode ground.
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1597.18 nm. Frequency 187.70 THz. FC-PC connector. Anode ground.
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1598.04 nm. Frequency 187.60 THz. FC-PC connector. Anode ground.
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1592.94 nm. Frequency 188.20 THz. FC-PC connector. Anode ground.
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1592.10 nm. Frequency 188.30 THz. FC-PC connector. Anode ground.
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1599.74 nm. Frequency 187.40 THz. FC-PC connector. Anode ground.
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1574.54 nm. Frequency 190.40 THz. FC-PC connector. Anode ground.
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1571.23 nm. Frequency 190.80 THz. FC-PC connector. Anode ground.
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1572.88 nm. Frequency 190.60 THz. FC-PC connector. Anode ground.
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1567.95 nm. Frequency 191.20 THz. FC-PC connector. Anode ground.
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1607.46 nm. Frequency 186.50 THz. FC-PC connector. Anode ground.
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1607.46 nm. Frequency 186.50 THz. FC-PC connector. Anode floating.
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1582.01 nm. Frequency 189.50 THz. FC-PC connector. Anode ground.
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1582.85 nm. Frequency 189.40 THz. FC-PC connector. Anode ground.
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1582.01 nm. Frequency 189.50 THz. FC-PC connector. Anode floating.
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1582.85 nm. Frequency 189.40 THz. FC-PC connector. Anode floating.
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1584.52 nm. Frequency 189.20 THz. FC-PC connector. Anode floating.
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1584.52 nm. Frequency 189.20 THz. FC-PC connector. Anode ground.
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1583.69 nm. Frequency 189.30 THz. FC-PC connector. Anode floating.
|
NEC
|
| TSOT-23 |
MILLIMETERS MIN 0.80 MAX 1.30 INCHES MIN 0.0315 MAX 0.0512
|
Analog Microelectronics
|
| V48B5E48BS2 V24B12E24B V24B12E24B1 V24B12E24B2 V24 |
IC ENCORE XP MCU FLASH 8K 20SOIC
IC ENCORE XP MCU FLASH 8K 28SOIC
T-SENSOR IC, DOUT TO92T-SENSOR IC, DOUT TO92; Temp, op. min:-50(degree C); Temp, op. max:150(degree C); Pins, No. of:3; Case style:TO-92; Base number:206; Voltage, supply max:6V
FasTrak Mini E-Grade Family FasTrak车辆迷你E级系
|
VICOR[Vicor Corporation]
Vicor, Corp.
|
| N83810M |
10Gb Duplex Multimode 50-125 OM3 LSZH Fiber Patch Cable (Mini-LC - Mini-LC) - Aqua, 10M (33-ft)
|
Tripp Lite. All Rights ...
|
| TO-263-2 |
(D2 PAK) A : MIN 9.65 MAX 10.42 B : MIN 8.28 MAX 9.66
|
Analog Microelectronics
|
| FS2VS-16A |
Solid-State Panel Mount Relay; Output Device:SCR; Output Voltage Max:280Vrms; Output Voltage Min:24Vrms; Control Voltage Max:140Vrms; Control Voltage Min:90Vrms; Load Current Max:18A; Switching:Zero Cross RoHS Compliant: Yes
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Mitsubishi Electric Corporation
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