| PART |
Description |
Maker |
| MNA-7 MNA-SERIES MNA-2 MNA-3 MNA-4 MNA-5 MNA-6 |
Monolithic Amplifiers High Directivity, 50? 0.5 to 5.9 GHz
Monolithic Amplifiers High Directivity 50 0.5 to 5.9 GHz
Monolithic Amplifiers High Directivity, 50з, 0.5 to 5.9 GHz
Monolithic Amplifiers High Directivity, 50, 0.5 to 5.9 GHz
|
MINI[Mini-Circuits]
|
| STB7102 STB7102TR 102 |
0.1/2.5 GHz Si MMIC BUFFER AMPLIFIERS
0.5/2.5 GHz UHF LO BUFFER AMPLIFIER
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| BFS17W BFS17W. |
RF-Bipolar - For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA
RF-Bipolar NPN Type Transistors with transition frequency from 1 to 6 GHz
NPN Silicon RF Transistor
|
INFINEON[Infineon Technologies AG]
|
| TA060-120-15-27 |
6.0 ?12.0 GHz 17dB Gain 27dBm Amplifiers
|
Transcom, Inc.
|
| ERA-5XSM |
Monolithic Amplifier 50OHM, Broadband, DC to 4 GHz
MONOLITHIC AMPLIFIERS 50 BROADBAND DC to 8 GHz
|
MINI[Mini-Circuits]
|
| AD8353 AD8353ACP-REEL7 AD8353-EVAL AD8353ACP-R2 |
100 MHz-2.7 GHz RF Gain Block
100 MHz - 2.7 GHz RF Gain Blocks, Silicon Bipolar Amplifiers
|
Analog Devices, Inc.
AD[Analog Devices]
|
| HMC551LP4 HMC551LP4E |
GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 0.8 - 1.2 GHz
Analog & Mixed-Signal Processing -> Amplifiers
|
Hittite Microwave Corporation
|
| Q62702-F1347 BFP194 |
From old datasheet system
PNP Silicon RF Transistor (For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents)
|
SIEMENS[Siemens Semiconductor Group]
|
| BFQ19S |
RF-Bipolar - For low noise, low distortion broadband amplifiers in wireless systems up to 1.5 GHz
NPN Silicon RF Transistor
|
Infineon Technologies AG
|
| ERA-5SM ERA-3SM ERA-50SM ERA-4 ERA-4SM ERA-4XSM ER |
MONOLITHIC AMPLIFIERS 50?BROADBAND DC to 8 GHz
MONOLITHIC AMPLIFIERS 50?/a> BROADBAND DC to 8 GHz
MONOLITHIC AMPLIFIERS 50 BROADBAND DC to 8 GHz
Surface Mount Monolithic Amplifier 50/ Broadband/ DC to 4 GHz
Monolithic Amplifier 50OHM/ Broadband/ DC to 4 GHz
AC-DC Converter, 60Watt,Input VAC: 90~260, Output VDC: 12, Max Output Current(A): 5, Package: Encapsulated, Isolation(VDC): 3000, Operating Temp.: -25C to 70C, Low Ripple & Noise, High Efficiency up to 80%, Indefinite (automatic recovery)
AC-DC Converter, 60Watt,Input VAC: 90~260, Output VDC: 5, Max Output Current(A): 10, Package: Encapsulated, Isolation(VDC): 3000, Operating Temp.: -25C to 70C, Low Ripple & Noise, High Efficiency up to 80%, Indefinite (automatic recovery)
AC-DC Converter, 60Watt,Input VAC: 90~260, Output VDC: 24, Max Output Current(A): 2.5, Package: Encapsulated, Isolation(VDC): 3000, Operating Temp.: -25C to 70C, Low Ripple & Noise, High Efficiency up to 80%, Indefinite (automatic recovery)
AC-DC Converter, 60Watt,Input VAC: 90~260, Output VDC: 15, Max Output Current(A): 4, Package: Encapsulated, Isolation(VDC): 3000, Operating Temp.: -25C to 70C, Low Ripple & Noise, High Efficiency up to 80%, Indefinite (automatic recovery)
AC-DC Converter, 75 Watt Input VAC: 90~260, Output VDC: 12, Max Output Current(A): 6.25, Package: Enclosed, Isolation(VDC): 3000, Operating Temp.: -25C to 70C, Low Ripple & Noise, High Efficiency up to 80%,Single Outputs
MONOLITHIC AMPLIFIERS 50з BROADBAND DC to 8 GHz 0 MHz - 4000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
MONOLITHIC AMPLIFIERS 50з BROADBAND DC to 8 GHz 0 MHz - 3000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
MINI[Mini-Circuits]
|
| BFY196 |
From old datasheet system
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise, high gain amplifiers up to 2 GHz.)
|
SIEMENS[Siemens Semiconductor Group]
|
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