| PART |
Description |
Maker |
| FH103 1283 |
High-Frequency Low-Noise Amplifier/ Differential Amplifier Applications
NPN Epitaxial Planar Silicon Composite Transistor
From old datasheet system
High-Frequency Low-Noise Amplifier, Differential Amplifier Applications
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| EL5134 EL5135 EL5235IS-T7 EL5235IS-T13 EL5235IS EL |
Single, 630MHz Low Noise Amplifier with Enable
Dual, 630MHz, Low Noise Amplifier with Enable
From old datasheet system
630MHz Gain of 5 Low Noise Amplifiers
630MHz, Gain of 5, Low Noise Amplifiers
|
INTERSIL[Intersil Corporation]
|
| MGA-665P8-BLK MGA-665P8-TR1 MGA-665P8 MGA-665P8-TR |
GaAs Enhancement-Mode PHEMT 0.5 6 GHz Low Noise Amplifier GaAs增强型PHEMT.56 GHz的低噪声放大
GaAs Enhancement-Mode PHEMT 0.5 - 6 GHz Low Noise Amplifier
From old datasheet system
MGA-665P8 · MGA-665P8 0.5-6GHz Low Noise Amplifier
|
Avago Technologies, Ltd.
Agilent(Hewlett-Packard)
Agilent (Hewlett-Packard)
|
| EL2125 EL2125CS-T13 EL2125CS-T7 EL2125CW-T7 EL2125 |
Ultra-Low Noise, Low Power, Wideband Amplifier
Op Amp, 175MHz Wideband, Ultra Low Noise 0.83nV/√Hz, Low Power, 2.5-15VDC
Ultra-Low Noise/ Low Power/ Wideband Amplifier
|
Intersil Corporation
|
| 2SC4703 2SC4703NE46234 2SC4703SH |
MICROWAVE LOW NOISE, LOW DISTORTION AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
MICROWAVE LOW NOISE LOW DISTORTION AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
MICROWAVE LOW NOISE/ LOW DISTORTION AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
BJT
|
NEC[NEC]
NEC Corp.
|
| OP-470GP OP-470GS OP-470ATC_883 OP-470 OP-470ARC_8 |
VERY LOW NOISE QUAD OPERATIONAL AMPLIFIER 极低噪声四运算放大器
VERY LOW NOISE QUAD OPERATIONAL AMPLIFIER QUAD OP-AMP, 600 uV OFFSET-MAX, 6 MHz BAND WIDTH, CQCC28
|
Analog Devices, Inc.
AD[Analog Devices]
|
| NTE2403 NTE2402 |
Silicon complementary PNP transistor. Low noise, UNF/VNF amplifier.
Silicon Complementary Transistors Low Noise, UHF/VHF Amplifier
Silicon Complementary Transistors Low Noise / UHF/VHF Amplifier
|
NTE[NTE Electronics]
|
| K4S64323LF-DN15 K4S64323LF-DN15-PB K4S64323LF-DN1H |
2M X 32 SYNCHRONOUS DRAM, 9 ns, PBGA90
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 14-SOIC 0 to 70 2Mx32移动SDRAM 90FBGA
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 14-SOIC 2Mx32移动SDRAM 90FBGA
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-PDIP 0 to 70 2Mx32移动SDRAM 90FBGA
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 8-CDIP -55 to 125 2Mx32移动SDRAM 90FBGA
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 20-LCCC -55 to 125 2Mx32移动SDRAM 90FBGA
2Mx32 Mobile SDRAM 90FBGA 2Mx32移动SDRAM 90FBGA
Dual Rail-To-Rail Micropower Operational Amplifier 8-SOIC 0 to 70
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| EC3H04C 1224 |
NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier and OSC Applications
From old datasheet system
High-Frequency Low-Noise Amplifier and OSC Applications 高频低噪声放大器和OSC应用
|
Sanyo Semicon Device
Sanyo Electric Co., Ltd.
|
