| PART |
Description |
Maker |
| 2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification
Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor
http://
|
| 2SJ518 |
Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| 2SJ517 |
Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| 2SJ552 2SJ552L 2SJ552S 2SJ552L/S |
Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching
Power switching MOSFET
|
HITACHI[Hitachi Semiconductor]
|
| 2SK2736 |
Silicon N Channel DVL MOS FET High Speed Power Switching
Silicon N Channel DV-L MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| 2SJ586 |
Silicon P Channel MOS FET High Speed Switching
|
Renesas Electronics Corporation
|
| 2SJ574 |
Silicon P Channel MOS FET High Speed Switching
|
HITACHI[Hitachi Semiconductor]
|
| 2SK3290 |
Silicon N Channel MOS FET High Speed Switching
|
HITACHI[Hitachi Semiconductor]
|
| FW306 |
N- Channel Silicon MOS FET High Speed Switching
|
Sanyo Semicon Device
|
| 2SJ576 |
Silicon P Channel MOS FET High Speed Switching
|
Renesas Electronics Corporation
|
| 2SJ576 |
Silicon P Channel MOS FET High Speed Switching
|
http://
HITACHI[Hitachi Semiconductor]
|
| RJL6018DPK-00-T0 RJL6018DPK |
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
