| PART |
Description |
Maker |
| MSAFZ15N40A MSAFX14N100A FSE1850 FSE1350 FSE1540 F |
N Channel MOSFET; Package: CoolPack1; trr (nsec): 120; t(on) (nsec): 180; ID (A): 15; RDS(on) (Ohms): 0.3; PD (W): 300; BVDSS (V): 400; Rq: 0.4; VSD (V): 1.5 SMALL SIGNAL, FET
N Channel MOSFET; Package: CoolPack1; trr (nsec): 850; t(on) (nsec): 60; ID (A): 14; RDS(on) (Ohms): 0.82; PD (W): 310; BVDSS (V): 1000; Rq: 0.25; VGS(th) (V): 4; VSD (V): 1.5 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1200; t(on) (nsec): 35; ID (A): 18; RDS(on) (Ohms): 0.28; PD (W): 150; BVDSS (V): 500; Rq: 0.9; VSD (V): 1.8 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1200; t(on) (nsec): 27; ID (A): 13; RDS(on) (Ohms): 0.4; PD (W): 125; BVDSS (V): 500; Rq: 1; VSD (V): 1.4 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1000; t(on) (nsec): 35; ID (A): 15; RDS(on) (Ohms): 0.3; PD (W): 125; BVDSS (V): 400; Rq: 1; VSD (V): 1.6 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1000; t(on) (nsec): 33; ID (A): 20; RDS(on) (Ohms): 0.21; PD (W): 150; BVDSS (V): 400; Rq: 0.9; VSD (V): 1.8 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-257; trr (nsec): 660; t(on) (nsec): 17; ID (A): 5; RDS(on) (Ohms): 1; PD (W): 50; BVDSS (V): 400; Rq: 2; VSD (V): 1.6 5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
|
| SDR9102CTP SDR9100CTN SDR9100CTP SDR9101CTN SDR910 |
120 AMP 100- 200 VOLTS 35 nsec HYPER FAST CENTERTAP RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| APT60D40SG APT60D40B APT60D40B_05 APT60D40BG APT60 |
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
Fast Recovery Epitaxial Diode; Package: D3 [S]; IO (A): 60; VR (V): 400; trr (nsec): 30; VF (V): 1.3; Qrr (nC): 540; 60 A, 400 V, SILICON, RECTIFIER DIODE
|
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
| APT2X101D40J APT2X100D40J |
Fast Recovery Epitaxial Diode; Package: ISOTOP®; IO (A): 100; VR (V): 400; trr (nsec): 37; VF (V): 1.3; Qrr (nC): 1050; 100 A, 400 V, SILICON, RECTIFIER DIODE
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
|
Microsemi, Corp.
Microsemi Corporation
|
| OM5008ST OM5009ST OM5008ST-15 |
HERMETIC JEDEC TO-257AA HIGH EFFICIENCY, SOFT RECOVERY RECTIFIER
400V 14A Hi-Rel Ultra-Fast Discrete Diode in a T-2 package 400V 14A条高可靠性超快速分立二极管的T - 2封装
14 Amp, 400 & 600 Volts, 35 nsec trr
|
List of Unclassifed Manufacturers
Alliance Semiconductor, Corp.
List of Unclassifed Manufac...
International Rectifier
|
| APT30DQ60KG |
Fast Recovery Epitaxial Diode; Package: TO-220 [K]; IO (A): 30; VR (V): 600; trr (nsec): 19; VF (V): 2; Qrr (nC): 400; 30 A, 600 V, SILICON, RECTIFIER DIODE, TO-220
|
Microsemi, Corp.
|
| HYB31645400ATL HYB3165400AJ-40 HYB3164400AJ-40 HYB |
16M x 4-Bit Dynamic RAM
High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85
High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD 0 to 70
16M X 4 FAST PAGE DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32
16M X 4 FAST PAGE DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, TSOP2-32
Bipolar Transistor; Collector Emitter Voltage, Vceo:75V; Power Dissipation, Pd:1.67W; DC Current Gain Min (hfe):120; C-E Breakdown Voltage:75V; Collector Current:1A; Transistor Polarity:NPN RoHS Compliant: Yes 16M X 4 FAST PAGE DRAM, 60 ns, PDSO32
|
Siemens Semiconductor Group
SIEMENS AG
Infineon Technologies AG
|
| SDR3NHFSMS SDR3KHF SDR3KHFSMS SDR3MHFSMS SDR3NHF |
3 AMP 800 - 1200 V 35 nsec Hyper Fast Rectifier
|
SSDI[Solid States Devices, Inc]
|
| SDR3NSMS SDR3A SDR3ASMS SDR3B SDR3BSMS SDR3D SDR3D |
3.0 AMPS 50 - 1200 VOLTS 50 - 80 nsec ULTRA FAST RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| SHF1406 SHF1402 SHF1403 SHF1404 SHF1405 |
4 AMPS, 200-600 VOLTS 30 nsec HYPER FAST RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| SDR5811CT_5 SDR5807CT SDR5807CT_5 SDR5809CT_5 SDR5 |
12 AMPS 50 - 300 VOLTS 35 nsec HYPER FAST CENTERTAP RECTIFIER
|
Solid States Devices, I...
SSDI[Solid States Devices, Inc]
|
