| PART |
Description |
Maker |
| 2N7002BKW |
60 V, 310 mA N-channel Trench MOSFET 310 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
NXP Semiconductors N.V.
|
| 2SD2248 |
Transistor Silicon NPN Epitaxial Type (Darlington power transistor) Hammer Drive, Pulse Motor Drive Applications For Inductive Load Drive
|
TOSHIBA
|
| 2SK296802 2SK2968 |
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSIII) Relay Drive, DC .DC Converter and Motor Drive Applications
DC−DC Converter, Relay Drive and Motor Drive Applications
|
Toshiba Semiconductor
|
| RO2053A-1 |
310.0 MHz SAW Resonator
|
RFM[RF Monolithics, Inc]
|
| PAK-II |
310 Ivy Glen Court
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| PAK-VA |
310 Ivy Glen Court
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| 6316 |
Two WE-310 Plugs To RJ45 / RJ48
|
Pomona Electronics
|
| LR38575 |
Timing Generator IC for 1 310 k-pixel CCD
|
Sharp Electrionic Components
|
| NTZD5110N NTZD5110NT1 NTZD5110NT1G NTZD5110NT5G |
Small Signal MOSFET 60 V, 310 mA, Dual N-Channel with ESD Protection 294 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
60 V, 310 mA, Dual N−Channel with ESD Protection, SOT−563
|
ON Semiconductor
|
| LZ23J3V LR36685 |
1/2.7-type Interline Color CCD Area Sensor with 1 310 k Pixels
|
SHARP[Sharp Electrionic Components]
|
