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NAND01GW4A2BE06 - Known Good Die, 1 Gbit (x 8/x 16), 528 Byte/264 word page, 3 V, NAND Flash memory

NAND01GW4A2BE06_4779832.PDF Datasheet


 Full text search : Known Good Die, 1 Gbit (x 8/x 16), 528 Byte/264 word page, 3 V, NAND Flash memory


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M28R400CT100D16 M28R400CT-KGD M28R400CB100D16 M28R Known Good Die 4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory 已知良品裸片4兆位56Kb的x16插槽,引导块.8V电源快闪记忆
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NAND02GW3B2BN1E NAND02GW3B2BN1F NAND02GW3B2BN6E NA 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
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NAND08GW3B2CN1E NAND08GW3B2CN1F NAND08GW3B2CN6E NA 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories
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NAND08GW4B2CN6E NAND08G-BXC NAND08GR3B2C NAND08GR3 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories
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V23849-R35-C55 V23849-R36-C55 Transceivers by Form-factor MSA - iSFP? 1.25 Gbit/s GBE; 4.25/2.125/1.0625 Gbit/s FC, 850 nm; MM; LC; common ground sheme
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V23832-T2331-M101 V23832-R411-M101 V23832-T2431-M1 PAROLI 2 Tx AC/ 1.6 Gbit/s
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