| PART |
Description |
Maker |
| M38869FFAGP M38869FFAHP M38869M8A-012HP M38869M8A- |
RAM size: 1024bytes; single-chip 8-bit CMOS microcomputer
RAM size: 2048bytes; single-chip 8-bit CMOS microcomputer
RAM size: 896bytes; single-chip 8-bit CMOS microcomputer
RAM size: 640bytes; single-chip 8-bit CMOS microcomputer
RAM size: 384bytes; single-chip 8-bit CMOS microcomputer
RAM size: 2048bytes single chip 8-bit CMOS microcomputer
RAM size: 1024bytes single chip 8-bit CMOS microcomputer
RAM size: 768bytes single chip 8-bit CMOS microcomputer
RAM size: 512bytes single chip 8-bit CMOS microcomputer
RAM size: 256bytes single chip 8-bit CMOS microcomputer
Single Chip 8-bit Microcomputer
3885 Series Microcontrollers: Keyboard Controller for Notebook PC
3886GROUP
RAM size: 192bytes single chip 8-bit CMOS microcomputer
RAM size: 384bytes single chip 8-bit CMOS microcomputer
RAM size: 640bytes single chip 8-bit CMOS microcomputer
RAM size: 896bytes single chip 8-bit CMOS microcomputer
RAM size: 1536bytes single chip 8-bit CMOS microcomputer
RAM size: 1536bytes; single-chip 8-bit CMOS microcomputer
RAM size: 512bytes; single-chip 8-bit CMOS microcomputer
RAM size: 192bytes; single-chip 8-bit CMOS microcomputer
RAM size: 256bytes; single-chip 8-bit CMOS microcomputer
RAM size: 768bytes; single-chip 8-bit CMOS microcomputer
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| HYB3118165BST-50 HYB5118165BST-50 HYB3118165BSJ-60 |
High-Speed Fully-Differential Amplifiers 8-MSOP -40 to 85 1M X 16 EDO DRAM, 50 ns, PDSO44
1M x 16-Bit Dynamic RAM 1k Refresh 100万16位动态随机存储器经销商刷
1M×16-Bit Dynamic RAM(1M×16动态RAM(快速页面模)
1M×16-Bit Dynamic RAM (Hyper Page Mode-EDO)(1M×16动RAM)
|
Siemens Semiconductor Group
SIEMENS AG
|
| CAT34WC02W-TE13 CAT34WC02Y-TE13 CAT34WC02Y-1.8TE13 |
MoBL® 2-Mbit (256K x 8) Static RAM
MoBL® 8-Mbit (512K x 16) Static RAM
MoBL2™ 4-Mb (256K x 16) Static RAM
MoBL® 4-Mbit (256K x 16) Static RAM
5V, 3.3V, ISR™ High-Performance CPLDs
Licorice Board (CY22150 Candy Board) EEPROM
MoBL® 4-Mbit (512K x 8) Static RAM EEPROM
MoBL2™ 4-Mb (256K x 16) Static RAM EEPROM
MoBL® 2-Mbit (128K x 16) Static RAM
256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
|
Bourns, Inc.
3M Company
|
| K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作）。在经营商业和工业温度范围
RES-140 0.0625W 1% THICK FILM
128K x 8 high speed static RAM, 5V operating, 15ns
128K x 8 high speed static RAM, 5V operating, 10ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| IC61S6432-8TQI IC61S6432 IC61S6432-117PQ IC61S6432 |
100MHz; 3.3V; 64K x 32 synchronous pipelined static RAM
SYNCHRONOUS STATIC RAM, Pipelined Synchronous SRAM
64K x 32 SYNCHRONOUS PIPELINE STATIC RAM
From old datasheet system
200MHz; 3.3V; 64K x 32 synchronous pipelined static RAM
75MHz; 3.3V; 64K x 32 synchronous pipelined static RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| 87C196JT AN87C196JQ AN87C196KR AN87C196JR AN87C196 |
Advanced 16-Bit CHMOS Microcontrollers
Advanced 16-bit CHMOS microcontroller. EPROM 12K, Reg RAM 360, Code RAM 128, I/O 41
Advanced 16-bit CHMOS microcontroller. EPROM 16K, Reg RAM 488, Code RAM 256, I/O 56
Advanced 16-bit CHMOS microcontroller. EPROM 16K, Reg RAM 488, Code RAM 256, I/O 41
Advanced 16-bit CHMOS microcontroller. EPROM 48K, Reg RAM 1.5K, Code RAM 512, I/O 41
|
Intel
|
| IC41SV4105 IC41SV4105-50J IC41SV4105-50JG IC41SV41 |
DYNAMIC RAM, FPM DRAM
From old datasheet system
1Mx4 bit Dynamic RAM with Fast Page Mode
|
ICSI[Integrated Circuit Solution Inc]
|
| SST5114 SST5116 |
1K x 8 Dual-Port Static RAM
64-Kbit (8K x 8) Static RAM 晶体管|场效应| P通道| SOT - 23封装
|
Omron Electronics, LLC
|
| TC55V4336FF-100 |
128K Word x 32 Bit Synchronous Pipelined Burst Static RAM(128K 瀛?32浣??姝ョ?????查???RAM)
|
Toshiba Corporation
|
