| PART |
Description |
Maker |
| FF75R10KN FF150R10KN FF100R10KN FS50R10KF2 FS8R06K |
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 75A I(C) | M:HL093HD5.6
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 150A I(C) | M:HL093HW048
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 100A I(C) | M:HL093HW048
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CES | 50A I(C)
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 8A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五（巴西）国际消费电子展| 8A条一（c
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 15A I(C) | M:HL080HD5.3 晶体管| IGBT的|正陈|双| 1KV交五（巴西）国际消费电子展|5A一（c）|米：HL080HD5.3
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 75A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五（巴西）国际消费电子展| 75A条一（c
|
Delta Electronics, Inc.
Fuji Electric Holdings Co., Ltd.
Infineon Technologies AG
|
| MG300Q2YS65H |
300 A, 1200 V, N-CHANNEL IGBT
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
Toshiba Corporation
|
| APTGF350DU60 |
Dual Common Source - IGBT
Dual common source NPT IGBT Power Module
|
Advanced Power Technology
|
| APTGF150DU120T |
Dual Common Source - IGBT
Dual common source NPT IGBT Power Module
|
Advanced Power Technology
|
| PRHMB600E6 PRHMB600E6C |
IGBT Module-Dual
|
Nihon Inter Electronics Corporation
|
| PRFMB300E6 PRFMB300E6C |
IGBT Module-Dual
|
Nihon Inter Electronics Corporation
|
| PRHMB400E6 |
IGBT Module-Dual
|
Nihon Inter Electronics Corporation
|
| PHMB400BS12 |
IGBT Module-Dual
|
Nihon Inter Electronics Corporation
|
| PHMB400E6 |
IGBT Module-Dual
|
Nihon Inter Electronics Corporation
|
| PRFMB50E6 |
IGBT Module-Dual
|
Nihon Inter Electronics Corporation
|
| PRFMB200E6 |
IGBT Module-Dual
|
Nihon Inter Electronics Corporation
|
| MG100Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
