| PART |
Description |
Maker |
| HTX4-600S |
NON INSULATED TYPE SENSITIVE GATE TRIACThe
|
SemiHow Co.,Ltd.
|
| HTP4A60S |
NON INSULATED TYPE SENSITIVE GATE TRIAC (TO-220 PACKAGE)
|
SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD
|
| PS11011 |
Application Specific Intelligent Power Module FLAT-BASE TYPE INSULATED PACKAGE
FLAT-BASE TYPE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
POWEREX[Powerex Power Semiconductors]
|
| PS11013 |
Application Specific Intelligent Power Module FLAT-BASE TYPE INSULATED PACKAGE
FLAT-BASE TYPE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
POWEREX[Powerex Power Semiconductors]
|
| AQZ102D AQZ202D AQZ205D AQZ204D AQZ207D AQZ107D AQ |
Power photoMOS relay (voltage sensitive type). AC/DC type. Output rating: load voltage 200 V, load current 0.9 A.
Power photoMOS relay (voltage sensitive type). AC/DC type. Output rating: load voltage 400 V, load current 0.45 A.
Power photoMOS relay (voltage sensitive type). AC/DC type. Output rating: load voltage 60 V, load current 2.7 A.
Power photoMOS relay (voltage sensitive type). DC type. Output rating: load voltage 200 V, load current 1.1 A.
Power photoMOS relay (voltage sensitive type). DC type. Output rating: load voltage 100 V, load current 2.3 A.
Power photoMOS relay (voltage sensitive type). DC type. Output rating: load voltage 400 V, load current 0.6 A.
Power photoMOS relay (voltage sensitive type). DC type. Output rating: load voltage 60 V, load current 3.6 A.
POWER PhotoMOS RELAYS (Voltage Sensitive Type)
|
Matsushita Electric Works(Nais)
NAIS[Nais(Matsushita Electric Works)]
|
| BCR20AM BCR20AM-8L |
400 V, 20 A, TRIAC, TO-220
MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE
MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| PS21342-N |
DIP - IPM
MITSUBISHI SEMICONDUCTOR Power Module TRANSFER-MOLD TYPE INSULATED TYPE
MITSUBISHI SEMICONDUCTOR TRANSFER-MOLD TYPE INSULATED TYPE
Intelligent Power Module TRANSFER-MOLD TYPE INSULATED TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
Powerex Power Semiconductors
|
| CM1200HC-66H |
HIGH POWER SWITCHING USE INSULATED TYPE
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| CM30MD3-12H |
MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE 中功率开关使用平面性基地型，绝缘型
MEDIUM POWER SWITCHING USE FLAT-BASE TYPE/ INSULATED TYPE
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CR3JM |
LOW POWER, STROBE USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| BCR3AM |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| BCR8CS |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
