| PART |
Description |
Maker |
| MGFL45V1920 L45V1920 |
From old datasheet system
1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET
1.9-2.0 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| EIC0910A-8 |
9.20-10.00 GHz 8-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIA1111-2 |
11.0-11.5 GHz 2-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIC6775-15 |
6.70-7.50 GHz 15-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EID1416-12 |
14.0-16.0 GHz 12-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIB1415-0.3P |
14.0-14.5 GHz 0.3-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIC8596-2 EIC8596-2NH |
8.50-9.60 GHz 2-Watt Internally-Matched Power FET
|
Excelics Semiconductor, Inc.
http://
|
| EIA1114-2 |
11.0-14.0 GHz 2-Watt Internally Matched Power FET
|
Excelics Semiconductor
|
| EIC7177-10 |
7.10-7.70 GHz 10-Watt Internally-Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIC1414-12 |
14.0-14.5 GHz 12-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIC1212-4 |
12.20-12.70 GHz 4-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
