| PART |
Description |
Maker |
| MGFC38V5867 |
5.8~6.75 GHZ BAND 6W INTERNALLY MATCHED GAASFET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| EIC7179-10 |
7.10-7.90 GHz 10-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EID1314A1-8 |
13.75-14.50 GHz 8-Watt Internally-Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIC1314-12 |
13.75-14.50 GHz 12-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIC2832-2 |
2.80-3.20 GHz 2-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIA1111-2 |
11.0-11.5 GHz 2-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EID1314A1-12 |
13.75-14.50 GHz 12-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EID1314A1-5 |
13.75-14.50 GHz 5-Watt Internally-Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EID8596A1-12 |
8.50 - 9.60 GHz 12-Watt Internally-Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIC8596-12 EIC8596-12NH |
8.50-9.60 GHz 12-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
http://
|
| EIC1212-4 |
12.20-12.70 GHz 4-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
