| PART |
Description |
Maker |
| CGD1040HI |
1 GHz, 20 dB gain GaAs high output power doubler
|
NXP Semiconductors
|
| CGD1044HI |
1 GHz, 25 dB gain GaAs high output power doubler
|
NXP Semiconductors
|
| LD7215 LD7215C LD7215D |
6 GHz / 3 kW / HELIX TYPE / PPM FOCUSING / HIGH POWER GAIN / FLAT GAIN VARIATION
6 GHz, 3 kW, HELIX TYPE, PPM FOCUSING, HIGH POWER GAIN, FLAT GAIN VARIATION 6千兆赫，3千瓦，螺旋式，分之为重点，高功率增益平坦增益变化
|
NEC Corp.
NEC, Corp.
|
| CGY1041 |
1 GHz - 21 dB gain GaAs push-pull amplifier
|
NXP Semiconductors
|
| LD7126 LD7126SERIES |
DBS-Band, 2.0KW/2.4KW Klystrons for Communications
17 GHz BAND, 2.0 kW/2.4 kW, HIGH EFFICIENCY, HIGH POWER GAIN
17 GHz BAND / 2.0 kW/2.4 kW / HIGH EFFICIENCY / HIGH POWER GAIN
|
NEC[NEC]
NEC Corp.
|
| CGD982LC |
1 GHz, 23 dB gain GaAs low current power doubler
|
NXP Semiconductors
|
| HMC625LP510 625LP5E |
0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 6 GHz
|
Hittite Microwave Corporation
|
| HMC625HFLP5E |
0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, 0.5 - 6 GHz
|
Hittite Microwave Corporation
|
| HMC625LP5 HMC625LP5E |
0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 6 GHz
|
Hittite Microwave Corporation
|
| AS193-000 |
AS193-000:PHEMT GaAs IC High Linearity 3 V Control|DC-6 GHz Plastic Packaged and Chip|SPST
PHEMT GaAs IC High Linearity 3 V Control SPDT 0.1-2.5 GHz Switch Chip
|
Skyworks Solutions
|
| HMMC-3022 |
DC-12 GHz High Efficiency GaAs HBT MMIC Divide-by-2 Prescaler(DC-12 GHz 高效砷化镓HBT单片微波集成电路定标
DC-12 GHz High Efficiency GaAs HBT MMIC Divide-by-2 Prescaler(DC-12 GHz 高效砷化镓HBT单片微波集成电路2定标
|
Agilent(Hewlett-Packard)
|
