| PART |
Description |
Maker |
| BL-BK331-AA-AV |
Chip material: AlGaInp/ GaAs
|
BRIGHT LED ELECTRONICS CORP
|
| BL-BD1X0209 |
Chip material: AlGaAs/GaAs
|
BRIGHT LED ELECTRONICS CORP
|
| BM-10K88ND |
super yellow chips, which are made from AlGaInP on GaAs substrate
|
BRIGHT LED ELECTRONICS CORP
|
| BL-BJG3R4V-1 |
LED AlGaInP/GaAs Super Orange Low current requirement.
|
Bright LED Electronics Corp.
|
| BL-BG33R4V |
LED AlGaInP/GaAs Super Red Low current requirement.
|
Bright LED Electronics Corp.
|
| BL-BK83V4V-1 |
LED AlGaInP/GaAs Super Yellow Low current requirement.
|
BRIGHT LED ELECTRONICS ...
BRIGHT LED ELECTRONICS CORP
|
| BL-BJG3V4V-1 |
LED AlGaInP/GaAs Super Orange Low current requirement.
|
BRIGHT LED ELECTRONICS CORP
|
| BL-BK33J4G-1 |
LED AlGaInP/GaAs Super Yellow Low current requirement.
|
BRIGHT LED ELECTRONICS CORP
|
| BL-BJ73V4V-1 |
LED AlGaInP/GaAs Super Orange Low current requirement.
|
BRIGHT LED ELECTRONICS CORP
|
| BL-BF43V4V-3 |
LED AlGaInP/GaAs Super Red Low current requirement.
10mV Dual N-Channel Matched MOSFET Pair, Enhancement Mode, 8L PDIP
|
Bright LED Electronics Corp.
|
| BL-BJH3R4V |
LED AlGaInP/GaAs Super Orange Low current requirement.
10mV Quad P-Channel Matched Pair MOSFET Array, Enhancement Mode, 14L CDIP
|
Bright LED Electronics Corp.
|
| AS179-92LF AS197-306 |
APN2015:GaAs FETs as Control Devices|DC-6 GHz Plastic Packaged and Chip|SPST
AS197-306:PHEMT GaAs IC High Power SP2T and SP3T S|DC-6 GHz Plastic Packaged and Chip|SPST AS197 - 306：PHEMT的砷化镓集成电路高功率SP2T和SP3T秒|的DC - 6GHz的塑料包装和芯片|聚苯乙烯
|
Amphenol, Corp.
|
