| PART |
Description |
Maker |
| RM1200DB-66S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| RM300DG-90S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| RM1200DG-66S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| EZ55Z3L-ZADJTR EZ55Z3L-ZADJTA EZ55Z3L-Z3.3TA EZ55Z |
THS6032 High Speed Amplifier Evaluation Modules
THS3001 High Speed Amplifier Evaluation Modules
THS6012 High Speed Amplifier Evaluation Modules
THS4042 High Speed Amplifier Evaluation Module
THS6022 High Speed Amplifier Evaluation Modules 积极的固定电压稳压器
THS4061 High Speed Amplifier Evaluation Module 积极的固定电压稳压器
THREE-TERMINAL POSITIVE FIXED VOLTAGE REGULATORS 三端固定电压调节
THS4012 High Speed Amplifier Evaluation Module 积极的固定电压稳压器
Positive Adjustable Voltage Regulator 积极可调电压稳压
THS4052 High Speed Amplifier Evaluation Module 积极的固定电压稳压器
ADS8383 Evaluation Module 积极可调电压稳压
THS4041 High Speed Amplifier Evaluation Module 积极的固定电压稳压器
|
Semtech, Corp.
Everlight Electronics Co., Ltd.
Taiwan Semiconductor Co., Ltd.
Black Box, Corp.
|
| OL5201N-25 OL5201N_25_5204N_25 OL5204N-25 |
PT 3C 3#20 SKT RECP
1.55 m High-Power Laser-Diode DIP Module
From old datasheet system
1.55 um High-Power Laser-Diode DIP Module
1.55 レm High-Power Laser-Diode DIP Module
1.55 μm High-Power Laser-Diode DIP Module
|
OKI electronic components
OKI SEMICONDUCTOR CO., LTD.
OKI[OKI electronic componets]
|
| 1SS397 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications
|
TOSHIBA
|
| 1SS370 E000291 |
From old datasheet system
DIODE (HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS)
DIODE (HIGH VOLTAGE HIGH SPEED SWITCHING APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| FDMF8704V |
High Efficiency / High Frequency FET plus Driver Multi-chip Module with Internal Voltage Regulator
|
Fairchild Semiconductor
|
| HVR-1X-40B SHV-20 SHV-16 UX-F0B SHV-02 SHV-03 SHV- |
9kV,High-Voltage Rectifier Diodes(9kV,高压整流二极 0.35 A, SILICON, SIGNAL DIODE
High-Voltage Rectifier Diodes 0.002 A, 4.5 V, SILICON, SIGNAL DIODE
Ultra low profile, Two-piece, Discrete wire, FPC, and fine coaxial cable connectors; HRS No: 685-0018-5 05; No. of Positions: 14; Operating Temperature Range (degrees C): -35 to 85; General Description: Accessory; Ground plate for FPC type
High-Voltage Rectifier Diodes
|
Sanken Electric Co., Ltd.
Sanken Electric Co.,Ltd.
SANKEN[Sanken electric]
http://
|
| BY459DX-1500S BY459DX-1500 |
Damper diode fast, high-voltage 1500 V, SILICON, RECTIFIER DIODE
Damper diode fast/ high-voltage
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
http://
|
| SDH10KM |
High Density,High Voltage,Standard Recovery Rectifier(????靛?10000V锛?俯搴?5???骞冲?姝ｅ??垫?1A,楂??搴?楂????????㈠??存???
1 A, SILICON, SIGNAL DIODE
|
Semtech Corporation
|
