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M52D16161A09 - 512K x 16Bit x 2Banks Mobile Synchronous DRAM

M52D16161A09_4747470.PDF Datasheet


Part No.	M52D16161A09 M52D16161A-10TG M52D16161A-10BG M52D16161A
Description	512K x 16Bit x 2Banks Mobile Synchronous DRAM
File Size	875.12K / 32 Page
Maker	Elite Semiconductor Memory ... Elite Semiconductor Memory Technology Inc.
Homepage	http://www.esmt.com.tw/index.asp
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Related Part Number

PART	Description	Maker
M12L16161A-5TG2Q M12L16161A-7TG2Q M12L16161A2Q	512K x 16Bit x 2Banks	Elite Semiconductor Memory Technology Inc.
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M12S16161A-10T M12S16161A-10TG	512K x 16Bit x 2Banks Synchronous DRAM	Elite Semiconductor Memory Technology Inc.
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A43L8316AV-5 A43L8316AV-5.5 A43L8316AV-6 A43L8316A	Cycle time:5ns; 200MHz CL=3 access time:4.5ns 128K x 16bit x 2banks synchronous DRAM Cycle time:5.5ns; 183MHz CL=3 access time:5.0ns 128K x 16bit x 2banks synchronous DRAM Cycle time:6ns; 166MHz CL=3 access time:5.5ns 128K x 16bit x 2banks synchronous DRAM Cycle time:7ns; 143MHz CL=3 access time:6.0ns 128K x 16bit x 2banks synchronous DRAM	AMIC Technology
M12L16161A-5TIG M12L16161A-7BIG M12L16161A-7TIG M1	1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50 512K x 16Bit x 2Banks Synchronous DRAM	Elite Semiconductor Memory Technology Inc.
M12L32162A0712 M12L32162A-7BVG	1M x 16Bit x 2Banks Synchronous DRAM	Elite Semiconductor Memory Technology Inc.
M12L32162A M12L32162A-7BG M12L32162A-7TG	1M x 16Bit x 2Banks Synchronous DRAM	Elite Semiconductor Memory Technology Inc.
N08L6182AB27I N08L6182AB27IT N08L6182AB7I N08L6182	8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 隆驴 16bit 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K ? 16bit 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16bit 8 Mb, 1.8 V Low Power SRAM; Package: BGA Green; No of Pins: 48; Container: Tray; Qty per Container: 300 512K X 16 STANDARD SRAM, 85 ns, PBGA48 8 Mb, 1.8 V Low Power SRAM; Package: BGA; No of Pins: 48; Container: Tray; Qty per Container: 300 512K X 16 STANDARD SRAM, 85 ns, PBGA48	ON Semiconductor

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