| PART |
Description |
Maker |
| HYB18H256321BF HYB18H256321BF-11_12_14 |
256-Mbit GDDR3 Graphics RAM GDDR3 Graphics RAM
|
Qimonda AG
|
| HYB18H512321BF-08 HYB18H512321BF-10 |
512-Mbit GDDR3 Graphics RAM
|
Qimonda AG
|
| HYB18H512321AF-12 HYB18H512321AFL14 HYB18H512321AF |
512-Mbit GDDR3 Graphics RAM
|
Infineon
|
| W641GG2JB-14 |
1-Gbit GDDR3 Graphics SDRAM
|
Winbond
|
| KDA0471PL-66 KDA0476CN-50 KDA0476PL-66 KDA0476PL-8 |
66MHz; RAM: 256 x 18; 7V; CMOS RAMDAC. For high resolution color graphics, CAD/CAM/CAE applications, image processing, desktop publishing
50MHz; RAM: 256 x 18; 7V; CMOS RAMDAC. For high resolution color graphics, CAD/CAM/CAE applications, image processing, desktop publishing
80MHz; RAM: 256 x 18; 7V; CMOS RAMDAC. For high resolution color graphics, CAD/CAM/CAE applications, image processing, desktop publishing
66MHz; RAM: 256 x 24; 7V; CMOS RAMDAC. For high resolution color graphics, CAD/CAM/CAE applications, image processing, desktop publishing
80MHz; RAM: 256 x 24; 7V; CMOS RAMDAC. For high resolution color graphics, CAD/CAM/CAE applications, image processing, desktop publishing
120MHz; RAM: 256 x 24; 7V; CMOS RAMDAC. For high resolution color graphics, CAD/CAM/CAE applications, image processing, desktop publishing
|
Samsung Electronic
|
| HYE25L256160AC HYE25L256160AC-75 HYE25L256160AC-8 |
256-Mbit Mobile-RAM
|
Infineon Technologies AG
|
| UPD4265805G5-A50-7JD UPD4264805G5-A50-7JD UPD42658 |
18-Mbit QDR™-II SRAM 2-Word Burst Architecture
1-Mbit (64K x 16) Static RAM
1M x 4 Static RAM
x8 EDO Page Mode DRAM x8 EDO公司页面模式DRAM
4-Mbit (256K x 16) Static RAM
|
NEC TOKIN, Corp.
|
| IS42S32800B-6B IS42S32800B-6BLI IS42S32800B-6T IS4 |
2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM
|
ISSI[Integrated Silicon Solution, Inc]
|
| APD-256G064 |
256 x 64 Graphics Display with Drive Electronics, TTL Level Data Interface, Large Bright Characters and Graphics, Slim Profile, Highly Visible for Long-Distance Viewing
|
Vishay
|
