| PART |
Description |
Maker |
| HMT351S6AFR8C-G7 HMT351S6AFR8C-H9 |
204pin DDR3 SDRAM SODIMM
|
Hynix Semiconductor
|
| HMT164S6BFR6C-G7 HMT112S6BFR6C-G7 HMT164S6BFR6C-H9 |
204pin DDR3 SDRAM SODIMMs
|
Hynix Semiconductor
|
| VL-MM9-2EBN |
2GB 256Mx64 DDR3 SDRAM LOW VOLTAGE NON-ECC UNBUFFERED SODIMM 204-PIN
|
List of Unclassifed Manufacturers
|
| M471B5273DH0 |
204pin Unbuffered SODIMM
|
Samsung
|
| M471B1G73BH0 |
204pin Unbuffered SODIMM
|
Samsung
|
| M464S1724DTS-C1H M464S1724DTS-L7C M464S1724DTS M46 |
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD 16Mx64M × 16位的SODIMM内存BanksK的刷新，3.3V的同步DRAM的社民党
16Mx64 SDRAM SODIMM based on 8Mx16 / 4Banks /4K Refresh / 3.3V Synchronous DRAMs with SPD
16Mx64 SDRAM SODIMM based on 8Mx164Banks4K Refresh3.3V Synchronous DRAMs with SPD
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| MT41J256M8 MT41J128M16 MT41J128M16HA-15EDTR MT41J1 |
DDR3 SDRAM MT41J512M4 64 Meg x 4 x 8 Banks MT41J256M8 32 Meg x 8 x 8 Banks MT41J128M16 16 Meg x 16 x 8 Banks
2Gb: x4, x8, x16 DDR3 SDRAM Features
DDR3 SDRAM MT41J512M4 ?64 Meg x 4 x 8 Banks MT41J256M8 ?32 Meg x 8 x 8 Banks MT41J128M16 ?16 Meg x 16 x 8 Banks
|
Micron Technology
|
| PFM-CVSREV.A PFM-CVS-A 1702002010 1701010150 17090 |
204-pin DDR3 800/1066 MHz SODIMM x 1, Up to 2 GB
CRT, 18-bit Single Channel LVDS LCD
|
AAEON Technology
|
| M470L3224FT0 M485L1624FT0-CB3 M470L1624FT0 M470L16 |
DDR SDRAM SODIMM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| KMM464S3323BN |
144pin SDRAM SODIMM
|
Samsung Semiconductor
|
| SDN03264C1CJ1SA-60 |
256MB DDR SDRAM SoDIMM
|
List of Unclassifed Manufac...
|
| M464S3323BN0-C1H/L1H M464S3323BN0-C1L/L1L |
144pin SDRAM SODIMM 144Pin支持内存的SODIMM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
