PART |
Description |
Maker |
NX5323EH |
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
|
NEC
|
NX5313 |
1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS
|
California Eastern Laboratories
|
NX5521 NX5521EH |
1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE
|
California Eastern Labs
|
NX5501EK-AZ NX5501 NX5501EH-AZ |
NECs 1550 nm InGaAsP MQW-FP LASER DIODE IN CAN PACKAGE FOR FTTH APPLICATION
|
CEL[California Eastern Labs]
|
NX5310EK-AZ NX5310EH-AZ NX5310 |
NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s, 1.25 Gb/S AND FTTH APPLICATIONS
|
CEL[California Eastern Labs]
|
FTM-9412P-F20 |
2x5 SFF GE-PON ONU Transceiver
|
Fiberxon
|
DS1865TTR |
PON Triplexer Control and Monitoring Circuit
|
MAXIM - Dallas Semiconductor
|
BT-1112XX |
10G XG-PON ONU Bi-direction OSA Module
|
AVAGO TECHNOLOGIES LIMI...
|
BT-2442CS |
10G E-PON Asymmetrical OLT Tri-direction OSA
|
AVAGO TECHNOLOGIES LIMI...
|
C380SX500 C380AX500 C380BX500 C380CX500 C380DX500 |
Phase Control SCR 310 Amperes Avg 800 Volts Phase Control SCR 310 Amperes Avg 1600 Volts
|
Powerex Power Semicondu... POWEREX[Powerex Power Semiconductors]
|