| PART |
Description |
Maker |
| HSMS-2800 HSMS-2802 HSMS-2803 HSMS-2804 HSMS-280C |
SURFACE MOUNT RF SCHOTTKY BARRIER DIODES
HSMS-2802 · Low reverse leakage Schottky diode
HSMS-2803 · Low reverse leakage Schottky diode
HSMS-2804 · Low reverse leakage Schottky diode
HSMS-2805 · Low reverse leakage Schottky diode
HSMS-2808 · Low reverse leakage Schottky diode
HSMS-280B · Low reverse leakage Schottky diode
HSMS-280C · Low reverse leakage Schottky diode
HSMS-280E · Low reverse leakage Schottky diode
HSMS-280F · Low reverse leakage Schottky diode
HSMS-280K · Low reverse leakage Schottky diode
HSMS-280L · Low reverse leakage Schottky diode
HSMS-280M · Low reverse leakage Schottky diode
HSMS-280N · Low reverse leakage Schottky diode
HSMS-280R · Low reverse leakage Schottky diode
|
http://
Agilent(Hewlett-Packard)
Agilent (Hewlett-Packard)
|
| MS8250-P2920 |
GaAs Schottky Diodes Flip Chip Anti Parallel Low RS
|
Microsemi Corporation
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| CFA0103 CFA010306 CFA0103-L1 |
KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
Low Noise GaAs FETs
|
MIMIX BROADBAND INC
|
| GN01096B |
GaAs device - GaAs MMICs - For Low noise Amplifier
|
Matsshita / Panasonic
|
| B2050C P1500E P1500ECMC P1500SCMC P1500SD P1500Z P |
TERMINAL
SIDACtor devices
to 71C, Low Ripple & Noise, High Efficiency up to 78%, Low Profile Plastic Case,Current Limit Auto-Recovery, Single & Dual Ouput Regulated
solid state crowbar devices 固态撬棍设
Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GT; No. of Contacts:14; Connector Shell Size:28; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight SIDACtor设备
solid state crowbar devices
|
Teccor Electronics
Hubbell Wiring Device-Kellems
Littelfuse, Inc.
Intel, Corp.
NXP Semiconductors N.V.
Diodes, Inc.
|
| MBRS15H45CT |
Discrete Devices -Diode-Schottky
|
Taiwan Semiconductor
|
| MBR30150CT-Y |
Discrete Devices -Diode-Schottky
|
Taiwan Semiconductor
|
| M521 |
Positive Voltage Control of GaAs MMIC Control Devices
|
M/A-COM Technology Solutions, Inc.
|
| MBRF12035R MBRF12030 MBRF12030R MBRF12020R MBRF120 |
High Power Schottky Rectifiers - Full Pak Devices
|
America Semiconductor
|
| MBRH20060 MBRH20060R MBRH240100R |
High Power Schottky Rectifiers - Half Pak Devices
|
America Semiconductor
|
