| PART |
Description |
Maker |
| MC68HC05J3 MC68HC05J3CDW MC68HC05J3CP MC68HC05J3DW |
High-density Complementary Metal Oxide Semiconductor (HCMOS) Microcomputer Unit
|
Motorola, Inc
|
| MC68HC11G5 MC68HC11G7 |
High-density Complementary Metal Oxide Semiconductor (HCMOS) Microcontroller Unit
|
Freescale Semiconductor, Inc
|
| MC68HC705L2B MC68HC705L2CB MC68HC705L2K MC68HC05L2 |
High-density complementary metal oxide semiconductor (HCMOS) microcontroller unit
|
Motorola, Inc
|
| ISPLSI2128VE ISPLSI2128VE-100LB100 ISPLSI2128VE-10 |
3.3V In-System Programmable SuperFAST?High Density PLD
CRYSTAL 32.768KHZ 12.5PF SMD
3.3V In-System Programmable SuperFAST?/a> High Density PLD
3.3V In-System Programmable SuperFAST⑩ High Density PLD
3.3V In-System Programmable SuperFAST High Density PLD
CRYSTAL 12.0 MHZ 20PF SMD
3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PQFP176
3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PBGA208
3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 6 ns, PBGA208
3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 10 ns, PBGA100
3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PBGA100
3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PQFP160
3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PQFP100
3.3V In-System Programmable SuperFASTHigh Density PLD 3.3在系统可编程超快⑩高密度可编程逻辑器件
3.3VIn-SystemProgrammableSuperFASTHighDensityPLD
3.3V In-System Programmable SuperFAST?/a> High Density PLD
|
LATTICE[Lattice Semiconductor]
Lattice Semiconductor Corporation
Lattice Semiconductor, Corp.
|
| MC68HC11PH8 |
High-density Complementary Metal Oxide Semiconductor (HCMOS) Microcomputer Unit 高密度互补金属氧化物半导体（HCMOS）微机组
|
Motorola Mobility Holdings, Inc.
|
| MC68HC11KW1 |
High-density complementary metal oxide semiconductor HCMOS) microcontroller unit 8-BIT, EEPROM, 4 MHz, MICROCONTROLLER, PQFP100
|
Motorola Mobility Holdings, Inc.
|
| BFC236821105 BFC236829564 6811334 BFC236859562 |
CAP,MET POLYESTER (MYLAR),1UF,100VDC,10% -TOL,10% TOL
CAP,MET POLYESTER (MYLAR),560NF,100VDC,5% -TOL,5% TOL
CAP,MET POLYESTER (MYLAR),330NF,63VDC,10% -TOL,10% TOL
CAP,MET POLYESTER (MYLAR),5.6NF,400VDC,5% -TOL,5% TOL
|
Vishay BCcomponents
|
| 1024-60LH_883 ISPLSI1024-60LH_883 1024 1024-60LH/8 |
60 MHz in-system prommable high density PLD
In-System Programmable High Density PLD EE PLD, 25 ns, PQCC68
:4; Features:Alumunium Foil Polyester/Tinned Copper Braid; Impedance:120ohm RoHS Compliant: Yes
|
Lattice Semiconductor, Corp.
Lattice Semiconductor Corporation
LATTICE[Lattice Semiconductor]
http://
|
| ISPLSI2128E-100LT176 ISPLSI2128E-135LT176 ISPLSI21 |
In-SystemProgrammableSuperFASTHighDensityPLD
In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PQFP176
In-System Programmable SuperFAST High Density PLD
In-System Programmable SuperFAST⑩ High Density PLD
In-System Programmable SuperFAST?/a> High Density PLD
|
Lattice Semiconductor, Corp.
Lattice Semiconductor Corporation
LATTICE[Lattice Semiconductor]
|
| SDHD7.5K SDHP7.5K SDHP15K SDHD15K SDHN7.5K |
STANDARD RECOVERY HIGH VOLTAGE DOUBLER AND CENTER TAPS
High Density,High Voltage,Standard Recovery Doubler Rectifier(反向电压7500V，温5℃时平均整流电流0.4A,高密高电标准恢复倍增整流
High Density,High Voltage,Standard Recovery Center Tap Rectifier(反向电压7500V，温5℃时平均整流电流0.8A,高密高电标准恢复正中心抽头整流器)
High Density,High Voltage,Standard Recovery Center Tap Rectifier(反向电压7500V，温25℃时平均整流电流0.8A,高密高电标准恢复正中心抽头整流器)
0.8 A, 7500 V, 2 ELEMENT, SILICON, SIGNAL DIODE
High Density,High Voltage,Standard Recovery Doubler Rectifier(反向电压15000V，温25℃时平均整流电流0.4A,高密高电标准恢复倍增整流 高密度，高电压，标准恢复倍流整流（反向电5000V，温25℃时平均整流电流0.4A，高密度，高电压，标准恢复倍增整流器）
|
Semtech Corporation
Semtech, Corp.
|
|
