| PART |
Description |
Maker |
| 2SC5606-A 2SC5606-T1-A 2SC56061 2SC5606 2SC5606-T1 |
L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR LEAD FREE, ULTRA SUPER MINIMOLD, 19, 1608, 3 PIN
NPN SILICON RF TRANSISTOR FOR LOW NOISE ・ HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)
NPN SILICON RF TRANSISTOR FOR LOW NOISE 路 HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)
NPN SILICON RF TRANSISTOR FOR LOW NOISE 隆陇 HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)
|
ST Microelectronics
NEC
|
| UPC2712TB UPC2712TB-E3-A UPC2711TB UPC2711TB-E3 UP |
5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER
|
CEL[California Eastern Labs]
|
| UPC2747TB UPC2747TB-E3 UPC2748TB UPC2748TB-E3 |
3 V, SUPER MINIMOLD SILICON MMIC AMPLIFIER FOR MOBILE COMMUMICATIONS
|
NEC[NEC]
|
| UPC2708TB UPC2708TB-E3 |
5 V/ SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER
5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER
|
NEC Corp.
NEC[NEC]
|
| UPC2708TB1 |
5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER
|
NEC
|
| 2SC5606-T1 2SC5606 |
NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD
NPN SILICON RF TRANSISTOR FOR LOW NOISE ・ HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD
|
NEC Corp.
|
| 2SC5011 2SC5011-T1 2SC5011-15 |
NPN EPITAXIAL SILICON RF TRANSISTOR
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD
|
Renesas Electronics Corporation
|
| UPC2710TB1 UPC2710TB-E3 |
5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER
1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
NEC
|
| UPC2756TB-E3-A UPC2756TB |
3 V SUPER MINIMOLD L-BAND SI MMIC DOWNCONVERTER
|
CEL[California Eastern Labs]
|
| UPC2710TB-E3-A UPC2710TB |
5V, SUPER MINIMOLD MEDIUM POWER SI MMIC AMPLIFIER
|
CEL[California Eastern Labs]
|
| UPC2748TB-E3-A UPC2747TB UPC2747TB-E3-A UPC2748TB |
3 V, SUPER MINIMOLD 900 MHz Si MMIC AMPLIFIER
|
CEL[California Eastern Labs]
|
