| PART |
Description |
Maker |
| AL108-338 |
GaAs PHEMT Switchable Gain LNA
|
ALPHA[Alpha Industries]
|
| AL108-338 |
GaAs PHEMT Switchable Gain LNA
|
Alpha Industries, Inc.
Alpha Industries Inc
|
| BS616LV1623 BS616LV1623TC BS616LV1623TC-55 BS616LV |
Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable
Asynchronous 16M(2Mx8 or 1Mx16 Switchable) bits Static RAM
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
BSI
ETC[ETC]
Brilliance Semiconductor
|
| 2SC1622 2SC1622A 2SC1622A-T2B 2SC1622A-L 2SC1622A- |
Low-frequency high-gain amplification silicon Tr.
AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
|
NEC[NEC]
|
| 2038-47-SM-RPLF 2038-35-SM-RP 2038-110-SM-RP BOURN |
UNIDIRECTIONAL, SILICON, TVS DIODE ROHS COMPLIANT, MINIATURE PACKAGE-2
symmetrical surface mount mini trigard UNIDIRECTIONAL, SILICON, TVS DIODE
simmetrical surface mount mini trigard
|
Bourns, Inc.
BOURNS INC
|
| IDT70V7288S_L 70V7288_DS_34523 IDT70V7288L15PF IDT |
64K x 16 Asynchronous Bank-Switchable Dual-Port SRAM
From old datasheet system
HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS
|
IDT[Integrated Device Technology]
|
| 2SC5177 2SC5177-T1 2SC5177-T2 |
High fT, high gain transistor
NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
|
NEC
|
| RFMA5880-0.5W-Q7 |
5.8 - 8.0 GHz High Gain Surface-Mounted PA
|
Excelics Semiconductor, Inc.
|
| RFMA5872-1W-Q7 |
5.8 - 7.2 GHz High Gain Surface-Mounted PA
|
Excelics Semiconductor, Inc.
|
| BS616UV2021DC BS616UV2021 BS616UV2021AC BS616UV202 |
10ns ultra low power/voltage CMOS SRAM 128K x 16 or 256K x 8bit switchable
Ultra Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable
Hex Buffer/Driver With Open-Drain Outputs 14-TSSOP -40 to 85
|
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, INC.
|
| MPH-XX-V-T |
MINI FLEX FEMALE SURFACE MOUNT
|
Adam Technologies, Inc.
|
