| PART |
Description |
Maker |
| MADR-009190-000100V4 |
Quad Driver for GaAs FET or PIN Diode
|
M/A-COM Technology Solutions, Inc.
|
| MADRMA0002 MADR-007690-DR002 MADRMA0001 |
Quad Bias Driver for GaAs FET and PIN Diode Switches
|
MACOM[Tyco Electronics]
|
| MADR-009190-000100 |
Quad Driver for GaAs FET or PIN Diode Switches and Attenuators
|
M/A-COM Technology Solu...
|
| DR65-0008-TR |
Quad Positive Voltage Driver for GaAs FET Switches and Attenuators 四为GaAs场效应管开关和衰减正电压驱
|
TE Connectivity, Ltd.
Citizen Finetech Miyota
Tyco Electronics
|
| RJK4512DPE-00-J3 RJK4512DPE |
Silicon N Channel MOS FET High Speed Power Switc
|
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
|
| 19241-00 19300-00 19341-00 19301 19200-00 19202 19 |
Single Driver for GaAs FET Switches and Attenuators
|
Clare, Inc.
|
| NE6500496 |
4 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC
|
| MGF0905A MGF0905 0905A |
MINIATURE POWER RELAY
L /S BAND POWER GaAs FET
L,S BAND POWER GaAs FET
LS BAND POWER GaAs FET
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| HIP4081 HIP4081IP |
2.6 A FULL BRDG BASED MOSFET DRIVER, PDIP20
Driver, Full Bridge FET, High Frequency, 80V/2.5A Peak, Independent 4 N-Channel FET Driver
|
INTERSIL CORP
|
| MGFL45V1920 L45V1920 |
From old datasheet system
1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET
1.9-2.0 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFS45V2325A |
2.3 - 2.5GHz BAND 32W INTERNALLY MATCHD GaAs FET 2.3 - 2.5GHz频带2W国内MATCHD砷化镓场效应
2.3-2.5 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| NE6501077 |
10 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
10 W L S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC[NEC]
ETC
|
