| PART |
Description |
Maker |
| CM150E3U-24H |
IGBT Modules:1200V IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| VIO125-12P1 VID125-12P1 VDI125-12P1 |
IGBT Modules: Boost Configurated IGBT Modules IGBT Modules 138 A, 1200 V, N-CHANNEL IGBT
|
IXYS[IXYS Corporation] IXYS, Corp.
|
| VIO130-06P1 VII130-06P1 VDI130-06P1 VID130-06P1 IX |
IGBT Modules From old datasheet system IGBT Modules: Buck Configurated IGBT Modules IGBT Modules: Boost Configurated IGBT Modules
|
IXYS[IXYS Corporation]
|
| QM100HA-H QM100HY-H |
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CM600DY-24A09 |
IGBT MODULES HIGH POWER SWITCHING USE
|
Mitsubishi Electric Semiconductor
|
| CM100RX-12A |
IGBT MODULES HIGH POWER SWITCHING USE
|
Mitsubishi Electric Semiconductor
|
| CM75TU-34KA09 |
IGBT MODULES HIGH POWER SWITCHING USE
|
Mitsubishi Electric Semiconductor
|
| CM600HX-12A |
IGBT MODULES HIGH POWER SWITCHING USE
|
Mitsubishi Electric Semiconductor
|
| CM400DU-12NFH CM400DU-12NFH09 |
IGBT MODULES HIGH POWER SWITCHING USE
|
Mitsubishi Electric Semiconductor
|
| CM600HU-24F09 |
IGBT MODULES HIGH POWER SWITCHING USE
|
Mitsubishi Electric Semiconductor
|
| CM100RL-24NF09 |
IGBT MODULES HIGH POWER SWITCHING USE
|
Mitsubishi Electric Semiconductor
|