| PART |
Description |
Maker |
| BGA318 Q62702-G0043 |
From old datasheet system
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) 硅双极单片放大器（级0瓦，增益模块十六分贝典型增益.0 GHz2 dBm典型的P - 1dB的在1.0千兆赫）
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) 0 MHz - 1200 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz)
|
Siemens Semiconductor Group
|
| UPC1678 UPC1678G UPC1678GV UPC1678G-E2 UPC1678G-E1 |
5 V-BIAS/ 7.5 dBm OUTPUT/ 2.0 GHz WIDEBAND Si MMIC AMPLIFIER
5 V-BIAS, 7.5 dBm OUTPUT, 2.0 GHz WIDEBAND Si MMIC AMPLIFIER
5 V-BIAS 7.5 dBm OUTPUT 2.0 GHz WIDEBAND Si MMIC AMPLIFIER
|
NEC[NEC]
|
| UPC1679 UPC1679G UPC1679G-E1 UPC1679G-E2 |
5 V-BIAS, 5.5 dBm OUTPUT, 1.8 GHz WIDEBAND Si MMIC AMPLIFIER 5伏偏置，5.5 dBm的输出，1.8 GHz的宽频带泗MMIC放大
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| BGA312 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz)
|
Siemens Semiconductor Group
|
| TIM1414-7-252 |
HIGH POWER P1dB=38.0 dBm at 13.75 GHz to 14.5 GHz
|
Toshiba Semiconductor
|
| TIM1414-8-252 |
HIGH POWER P1dB=39.0 dBm at 13.75 GHz to 14.5 GHz
|
Toshiba Semiconductor
|
| TA020-180-28-16 |
2 -18 GHz 16 dBm Amplifier
|
Transcom, Inc.
|
| TA010-020-15-15 |
1.0 - 2.0 GHz 15 dBm Amplifier
|
Transcom, Inc.
|
| MGA-82563 MGA-82563-BLK MGA-82563-TR1 MGA82563 |
0.1-6 GHz 3V, 17 dBm Amplifier
0.1-6 GHz 3V / 17 dBm Amplifier
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| TA160-180-25-27 |
16 - 18 GHz 27 dBm Amplifier
|
Transcom, Inc.
|
