Part Number Hot Search : 
XN4216 4822E TF708 29LV00 30P06P NJU6677 EPG4000S DEVICE
Product Description
Full Text Search

MC-45D16CB641 - 16 M-WORD BY 64-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE

MC-45D16CB641_4661225.PDF Datasheet


 Full text search : 16 M-WORD BY 64-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
 Product Description search : 16 M-WORD BY 64-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE


 Related Part Number
PART Description Maker
M6MGT331S8AKT M6MGB331S8AKT 33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
Renesas Electronics Corporation
M6MGT331S8BKT M6MGB331S8BKT 33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
Renesas Electronics Corporation
MR27V852E MR27V852ERA MR27V852EJA 524,288 Word X 16 - Bit or 1,048,576 - Word X 8 - Bit 8 - Word x 16-Bit or 16 - Word x 8-Bit Page Mode One Time PROM
OKI[OKI electronic componets]
MR27V452DTP MR27V452D MR27V452DMP MR27V452DRP 262,144-Word x 16-Bit or 524,288-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
OKI[OKI electronic componets]
OKI SEMICONDUCTOR CO., LTD.
CY7C1518KV18-300BZXC 72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 DDR SRAM, 0.45 ns, PBGA165
Cypress Semiconductor, Corp.
CY7C1316BV18 CY7C1318BV18 CY7C1916BV18 CY7C1320BV1 18-Mbit DDR-II SRAM 2-Word Burst Architecture(2字Burst结构,18-Mbit DDR-II SRAM) 18兆位的DDR - II SRAM字突发架构(2字突发结18 -兆位的DDR - II SRAM的)
18-Mbit DDR-II SRAM 2-Word Burst Architecture(2瀛?urst缁??,18-Mbit DDR-II SRAM)
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
PD46364092BF1-E40-EQ1 PD46364182BF1-E40-EQ1 PD4636 36M-BIT DDR II SRAM 2-WORD BURST OPERATION
Renesas Electronics Corporation
PD44164362BF5-E35-EQ3-A PD44164362BF5-E40-EQ3-A PD 18M-BIT DDR II SRAM 2-WORD BURST OPERATION
Renesas Electronics Corporation
PD46184182BF1-E40-EQ1 PD46184362BF1-E40-EQ1 PD4618 18M-BIT DDR II SRAM 2-WORD BURST OPERATION
Renesas Electronics Corporation
MR27V6402G 4M-Word x 16-Bit or 8M-Word x 8-Bit OTP
From old datasheet system
4M?Word ? 16?Bit or 8M?Word ? 8?Bit OTP
4MWord 16Bit or 8MWord 8Bit OTP
OKI electronic componet...
OKI[OKI electronic componets]
MSM27C802CZ 524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit One Time PROM
524288-Word x 16-Bit or 1048576-Word x 8-Bit One Time PROM
OKI electronic components
OKI[OKI electronic componets]
MC-45D16CB641 MC-45D16CB641KF-C75 MC-45D16CB641KF- 16 M-WORD BY 64-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
NEC Corp.
 
 Related keyword From Full Text Search System
MC-45D16CB641 circuit MC-45D16CB641 example commands MC-45D16CB641 Analog MC-45D16CB641 pitch MC-45D16CB641 接腳圖
MC-45D16CB641 standard MC-45D16CB641 Semiconductor MC-45D16CB641 制造商 MC-45D16CB641 UNITED CHEMI CON MC-45D16CB641 buffer
 

 

Price & Availability of MC-45D16CB641

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.055047035217285