| PART |
Description |
Maker |
| NAND01G-B2B NAND01GR3B2CN6E NAND02GR3B2CN6E NAND01 |
1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
|
Numonyx B.V
|
| NAND01BG-B NAND01GW3B2AN6 NAND01GR3B2AN6 NAND01GR3 |
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| NAND02GW3B2D |
2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories
|
Numonyx B.V
|
| NAND08GW3C2BZL1E NAND16GW3C2BZL1E NAND08GW3C2BZL1F |
8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
|
Numonyx B.V
|
| NAND16GW3C4A NAND08GW3C4AN1E NAND16GW3C4AN1E NAND0 |
8/16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
|
Numonyx B.V
|
| NAND256-A NAND01G-A NAND01GW3A2AZB1 NAND01GW3A0AZB |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位千兆位（x8/x1628 Byte/264字的页面.8V/3V，NAND闪存芯片
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位1千兆位（x8/x1628 Byte/264字的页面1.8V/3V，NAND闪存芯片
128M X 8 FLASH 1.8V PROM, 35 ns, PBGA63
8M X 16 FLASH 1.8V PROM, 35 ns, PDSO48
64M X 8 FLASH 3V PROM, 35 ns, PBGA55
64M X 16 FLASH 1.8V PROM, 35 ns, PDSO48
128M X 8 FLASH 3V PROM, 35 ns, PDSO48
8M X 16 FLASH 3V PROM, 35 ns, PDSO48
32M X 16 FLASH 3V PROM, 35 ns, PDSO48
32M X 16 FLASH 3V PROM, 35 ns, PBGA55
|
ST Microelectronics
意法半导
STMicroelectronics N.V.
NUMONYX
http://
|
| NAND04GW3C2AN1E NAND04GA3C2A NAND04GW3C2AN6E NAND0 |
4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory 4Gbit的，2112字节的页V供电，多级NAND闪存
|
意法半导
STMicroelectronics N.V.
|
| A29DL324TG-90 A29DL324TV-90 A29DL324UG-90 |
32M-Bit CMOS Low Voltage Dual Operation Flash Memory 4M-Byte by 8-Bit (Byte Mode) / 2M-Word by 16-Bit (Word Mode)
|
http://
AMIC Technology Corporation
|
| UPD23C64300F9-XXX-BC3 UPD23C64300 UPD23C64300F9-BC |
64M-BIT MASK-PROGRAMMABLE ROM 8M-WORD BY 8-BIT (BYTE MODE) / 4M-WORD BY 16-BIT (WORD MODE) 6400位掩膜可编程ROM00万字位（字节模式 4分字6位（字模式）
CAP 3.6PF 16V /-0.1PF THIN-FILM SN90/PB10/NI 30PPM TR-7-PA
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| UPD23C32380GZ-MJH UPD23C32340GZ-MJH UPD23C32340F9- |
32M-BIT MASK-PROGRAMMABLE ROM 4M-WORD BY 8-BIT (BYTE MODE) / 2M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE 32兆位掩膜可编程ROM的分位（字节模式 200万字6位（字模式）页面访问模式
CAP 3PF 16V /-0.1PF THIN-FILM SN90/PB10/NI 30PPM TR-7-PA
|
http://
NEC, Corp.
NEC Corp.
|
| UPD23C16380GZ-XXX-MJH UPD23C16340 UPD23C16340F9-BC |
16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT (BYTE MODE) / 1M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE
|
NEC[NEC]
|
| UPD23C32300GZ-XXX-MJH UPD23C32300 UPD23C32300F9-BC |
32M-BIT MASK-PROGRAMMABLE ROM 4M-WORD BY 8-BIT (BYTE MODE) / 2M-WORD BY 16-BIT (WORD MODE) 32兆位掩膜可编程ROM的分位（字节模式 200万字6位（字模式）
CAP 0.01UF 100V 5% X7R SMD-0805 TR-13 PLATED-NI/SN 32兆位掩膜可编程ROM的分位（字节模式 200万字6位（字模式）
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
