| PART |
Description |
Maker |
| K4C89183AF-GIFB K4C89083AF-ACF5 K4C89083AF-ACF6 K4 |
288Mb x18 Network-DRAM2 Specification
|
SAMSUNG[Samsung semiconductor]
|
| K4C89083AF-ACF5 K4C89083AF-ACF6 K4C89083AF-ACFB K4 |
288Mb x18 Network-DRAM2 Specification
|
Samsung Electronic
|
| IS49NLS18160 |
288Mb (x9, x18) Separate I/O RLDRAM 2 Memory
|
Integrated Silicon Solution, Inc
|
| IS64LPS12836EC-200TQA3 IS64VPS12836EC-200TQA3 IS64 |
128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT SRAM
|
Integrated Silicon Solu...
|
| CY7C1382B-133BGC CY7C1382B-133BGI CY7C1382B-133BZC |
x36 Fast Synchronous SRAM
x18 SRAM x18的SRAM
|
Cypress Semiconductor, Corp.
|
| GS88118T-80 GS88118T-80I GS88136T-11.5I GS88118T-1 |
x36 Fast Synchronous SRAM
x18 Fast Synchronous SRAM x18快速同步SRAM
|
GSI Technology, Inc.
Electronic Theatre Controls, Inc.
|
| HYM72V64756BLT8-P HYM72V64756BLT8-S HYM72V64756BT8 |
64Mx72|3.3V|P/S|x18|SDR SDRAM - Unbuffered DIMM 512MB 64Mx72 | 3.3 | | x18 | SDRAM的特别提款权-无缓冲DIMM 512MB
|
Samsung Semiconductor Co., Ltd.
Leshan Radio Company, Ltd.
Hynix Semiconductor
|
| GS82582QT20GE-375 GS82582QT20GE-450I GS82582QT20GE |
288Mb SigmaQuad-II TM Burst of 2 SRAM
|
GSI Technology
|
| MT49H32M9CFM-XX MT49H16M18C MT49H16M18CFM-XX MT49H |
288Mb SIO REDUCED LATENCY(RLDRAM II)
|
MICRON[Micron Technology]
|
| IDT72V51236L6BB IDT72V51236L6BB8 IDT72V51256 IDT72 |
4Q x36 512K Multi-Queue, 3.3V
4Q x36 2M Multi-Queue, 3.3V
4Q x36 1M Multi-Queue, 3.3V
|
IDT
|
