| PART |
Description |
Maker |
| MT49H8M32 MT49H8M32FM |
REDUCED LATENCY DRAM RLDRAM
|
Micron Technology
|
| MT49H8M36 MT49H16M18 MT49H32M9 |
288Mb CIO Reduced Latency
|
MICRON[Micron Technology]
|
| LTC2421 LTC2422 LTC2421CMS LTC2422CMS LTC2422IMS L |
1-/2-Channel 20-Bit UPower No Latency ADCs in MSOP-10
2-Ch 8ppm INL, 1.2ppm Noise, No Latency Delta Sigma, MS10
8ppm INL, 1.2ppm Noise, 20-Bit No Latency Delta Sigma, MS10
1-/2-Channel 20-Bit Power No Latency DeltaSigmaADCs in MSOP-10
1-/2-Channel 20-Bit µPower No Latency DeltaSigma™ ADCs in MSOP-10
|
LINER[Linear Technology]
|
| IS49NLS18160 |
288Mb (x9, x18) Separate I/O RLDRAM 2 Memory
|
Integrated Silicon Solution, Inc
|
| IS49RL36160 |
576Mb: x18, x36 RLDRAM 3 Features
|
Integrated Silicon Solution, Inc
|
| SI4850EY SI4850EY-E3 SI4850EY-T1 SI4850EY-T1-E3 |
N-Channel Reduced Qg, Fast-Switching MOSFET N沟道Qg，快速开关MOSFET
N-Channel Reduced Qg, Fast Switching MOSFET N沟道减少Qg和，快速开关MOSFET
N-Channel Reduced Qg/ Fast Switching MOSFET
|
Vishay Intertechnology, Inc.
Vishay Siliconix
|
| HY57V64820HGLTP-5 HY57V64820HGLTP-55 HY57V64820HGL |
4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, PDSO54
CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 220uF; Voltage: 25V; Case Size: 8x11.5 mm; Packaging: Bulk
|
Hynix Semiconductor, Inc.
http://
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| TCS59SM716AFTL-80 TCS59SM716AFTL-70 TCS59SM716AFTL |
2M×4Banks×16Bits Synchronous DRAM(4M×16位同步动态RAM)
8M×4Banks×4Bits Synchronous DRAM(4M×4位同步动态RAM)
4M×4Banks×8Bits Synchronous DRAM(4M×8位同步动态RAM) 4米4Banks × 8位同步DRAM米8位同步动态RAM）的
8M?4Banks?4Bits Synchronous DRAM(4缁?M?4浣??姝ュ???AM)
SYNCHRONOUS DRAM, PDSO54
|
Toshiba Corporation
Toshiba, Corp.
|
| HM5113805F-6 HM5113805FLTD-6 HM5113805FTD-6 HM5112 |
DRAM Chip, EDO DRAM, 16MByte, 3.3V Supply, Commercial, TSOP II, 32-Pin
128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
|
Hitachi Semiconductor
|
| LTC2401 LTC2401CMS LTC2401IMS LTC2402 LTC2402CMS L |
1-/2-Channel 24-Bit µPower No Latency Delta-Sigma ADC in MSOP-10; Package: MSOP; No of Pins: 10; Temperature Range: -40°C to 85°C 1-CH 24-BIT DELTA-SIGMA ADC, SERIAL ACCESS, PDSO10
1-/2-Channel 24-Bit µPower No Latency Delta-Sigma ADC in MSOP-10; Package: MSOP; No of Pins: 10; Temperature Range: 0°C to 70°C 2-CH 24-BIT DELTA-SIGMA ADC, SERIAL ACCESS, PDSO10
1-/2-Channel 24-Bit µPower No Latency Delta-Sigma ADC in MSOP-10; Package: MSOP; No of Pins: 10; Temperature Range: -40°C to 85°C 2-CH 24-BIT DELTA-SIGMA ADC, SERIAL ACCESS, PDSO10
1-/2-Channel 24-Bit mPower No Latency DSTMADCs in MSOP-10
1-/2-Channel 24-Bit PowerNo Latency Delta-SigmaADC in MSOP-10
1-/2-Channel 24-Bit µPowerNo Latency Delta-Sigma™ADC in MSOP-10
|
Linear Technology, Corp.
|
| 120NQ600-1 |
Reduced RFI and EMI
|
Sangdest Microelectroni...
|
| CY7C1543V18 CY7C1543V18-300BZC CY7C1543V18-300BZI |
72-Mbit QDR垄芒-II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
72-Mbit QDR?II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
|
Cypress Semiconductor
|
