| PART |
Description |
Maker |
| RM60CZ-2H RM60DZ-2H RM60CZ-H RM60DZ-H RM60DZ-M RM6 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| RM50C1A-XXS RM50DA-C1A-XXS RM50DA/CA/C1A-XXS RM50C |
FAST RECOVERY DIODE MODULES MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE
Fast Recovery Diode Modules, F Series (for IGBT speed switching)
MEDIUM POWER/ HIGH FREQUENCY USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| SI53102-A2 |
PCI-EXPRESS GEN 1, GEN 2, GEN 3, AND GEN 4 1:2 FAN-OUT CLOCK BUFFER
|
Silicon Laboratories
|
| IRK26 |
ADD-A-pak-TM GEN V Power Modules
|
International Rectifier
|
| IRKD56 IRKE71 IRKJ56 |
(IRKxxx) ADD-A-pak GEN V Power Modules
|
International Rectifier
|
| MDD250-16N1 MDD250 MDD250-08N1 MDD250-12N1 MDD250- |
High Power Diode Modules 290 A, 1200 V, SILICON, RECTIFIER DIODE
Thyristor and Rectifiers Modules
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| E80276 E80271 E80276N |
TRANSISTOR MODULES MEDIUM POWER SWITCHING USE
|
Mitsubishi Electric Semiconductor
|
| VBO65-12NO7 VBO65-16NO7 VBO65-08NO7 VBO65-14NO7 VB |
Power Modules/Rectifier Bridge Modules: Single Phase Diode Bridges
|
IXYS
|
| VUO85-16NO7 |
Power Modules/Rectifier Bridge Modules: Three Phase Diode Bridges
|
IXYS
|
| VS-T50RIA |
Medium Power Phase Control Thyristors (Power Modules), 50 A, 70 A, 90 A
|
Vishay Siliconix
|
