| PART |
Description |
Maker |
| IS42S16160C IS42S16160C-6TL IS42S16160C-6TLI IS42S |
256 Mb Single Data Rate Synchronous DRAM
|
Integrated Silicon Solution, Inc
|
| ASM2P5T905A ASM2I5T905AF-28TR ASM2P5T905AF-28TR AS |
2.5V Single Data Rate 1:5 Clock Buffer Terabuffer
|
PulseCore Semiconductor
|
| IS45S16160C |
256 Mb Single Data Rate Synchronous DRAM
|
Integrated Silicon Solution
|
| EM423M3284LBA-8FE EM424M3284LBA-75FE EM424M3284LBA |
512Mb (4MBank2) Double DATA RATE SDRAM
512Mb (4MBank32) Double DATA RATE SDRAM
512Mb (4M4Bank2) Double DATA RATE SDRAM
|
Electronic Theatre Controls, Inc.
|
| IDT723643 IDT723633 IDT723623 IDT723623L15 IDT7236 |
HIGH-SLEW-RATE, SINGLE-SUPPLY OPERATIONAL AMPLIFIERS 14-SOIC 0 to 70
Quad, High Slew Rate, Single-Supply, Op Amp 14-TSSOP 0 to 70
High-Slew-Rate, Single-Supply Operational Amplifier 8-PDIP -40 to 105
Quad, High Slew Rate, Single-Supply, Op Amp 14-SOIC 0 to 70
CMOS BUS-MATCHING SyncFIFOTM 256 x 36, 512 x 36, 1,024 x 36
HIGH-SLEW-RATE, SINGLE-SUPPLY OPERATIONAL AMPLIFIERS 14-PDIP 0 to 70 的CMOS总线匹配SyncFIFOTM 256 × 3612 × 36024 × 36
|
济南固锝电子器件有限公司
Jinan Gude Electronic Device Co., Ltd.
|
| M13S5121632A-2S |
Double-data-rate architecture, two data transfers per clock cycle
|
Elite Semiconductor Mem...
|
| W631GG6KB-15 W631GG6KB12A W631GG6KB12I W631GG6KB12 |
Double Data Rate architecture: two data transfers per clock cycle
|
Winbond
|
| NT5DS4M32EG-5 NT5DS4M32EG-5G NT5DS4M32EG-6 |
1M × 32 Bits × 4 Banks Double Data Rate Synchronous RAM With Bi-Directional Data Strobe and DLL
|
NanoAmp Solutions, Inc.
|
| W9412G6JH W9412G6JH-5 |
2M ?4 BANKS ?16 BITS DDR SDRAM
Double Data Rate architecture; two data transfers per clock cycle
|
Winbond
|
| MB81ES123245-10 |
128 M-BIT (4-BANK 】 1 M-WORD 】 32-BIT) SINGLE DATA RATE I/F FCRAM Consumer/Embedded Application Specific Memory for SiP
|
Fujitsu Media Devices Limited
|
