PART |
Description |
Maker |
MGFC38V5964_97 MGFC38V5964 MGFC38V596497 |
5.9 - 6.4GHz BAND 6W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
EIA1616-8P-2 |
16.2-16.4GHz 8-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
MGFC44V5964 |
5.9-6.4GHz BAND 24W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
MGFC40V5964_04 MGFC40V5964 MGFC40V596404 |
5.9 ~ 6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
R414720000 |
ATTENUATOR, N 2W 20DB 12.4GHZATTENUATOR, N 2W 20DB 12.4GHZ; Impedance:50R; Attenuation:20dB; Connector type:N; Frequency, operating max:12.4GHz; Power rating:2W 0 MHz - 12400 MHz RF/MICROWAVE FIXED ATTENUATOR
|
Radiall S.A.
|
RF2958PCBA RF2958TR13 |
2.4GHz SPREAD-SPECTRUM TRANSCEIVER 2.4扩谱收发 2.4GHz SPREAD-SPECTRUM TRANSCEIVER TELECOM, CELLULAR, RF AND BASEBAND CIRCUIT, QCC32
|
RF Micro Devices, Inc.
|
BTA16-600BW3G BTA16-800BW3G BTA16-600BW3 |
Triac, 3 Quadrant Internally Isolated, 50 mA I-GT, 16 A I-T(RMS) Triacs Silicon Bidirectional Thyristors 600V 16 A, 50mA Igt 3 Quadrant Internally Isolated Triac
|
ON Semiconductor
|
SE2522BL |
RangeCharger 2.4GHz 23 dBm Power Amplifier Preliminary Information RangeCharger⑩ 2.4GHz 23 dBm Power Amplifier Preliminary Information
|
SiGe Semiconductor, Inc.
|
BTA16-600SW3G BTA16-600SW3 |
Triac, 3 Quadrant Internally Isolated, 10 mA I-GT, 16 A I-T(RMS) 600V 16 A, 10mA Igt 3 Quadrant Internally Isolated Triac
|
On Semiconductor
|
MGFL45V1920 L45V1920 |
From old datasheet system 1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET 1.9-2.0 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
HFA3624 HFA3624IA HFA3624IA96 |
2.4GHz Up/Down Converter
|
INTERSIL[Intersil Corporation]
|
ISL3685 ISL3685IR ISL3685IR96 |
2.4GHZ RF/IF CONVERTER AND SYNTHESIZER
|
Intersil Corporation
|