| PART |
Description |
Maker |
| FDMA6023PZT |
-20V Dual P-Channel PowerTrench® MOSFET; 6-MicroFET 3600 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Fairchild Semiconductor, Corp.
|
| CP20420PQFP160A-0I CP20420PQFP160B-1I CP20840PQFP1 |
FPGA, 896 CLBS, 3600 GATES, PQFP160 PLASTIC, QFP-160
FPGA, 1685 CLBS, 7100 GATES, PQFP160 PLASTIC, QFP-160
FPGA, 474 CLBS, 1900 GATES, PQCC84
FPGA, 896 CLBS, 3600 GATES, PQCC84
FPGA, 896 CLBS, 3600 GATES, CPGA155
|
|
| SMP6LC08-2P-T7 |
3600 W, BIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE SOP-16
|
ProTek Devices
|
| C784DP C784CM C784CN C784CS C784CT C784DA C784DB C |
Phase Control SCR 1650 Amperes Average 3600-4400 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| XMGG7-20B3 |
From old datasheet system
Surface Mount High Dynamic Range Mixer 3400-3600 MHz, Upconverter, High IP3
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| CK-L09505M521 CK-L09505D521 CK-L09623M511 CK-R2273 |
9250 MHz - 9750 MHz RF/MICROWAVE ISOLATOR
8400 MHz - 10700 MHz RF/MICROWAVE ISOLATOR
21200 MHz - 24200 MHz RF/MICROWAVE ISOLATOR
3400 MHz - 3500 MHz RF/MICROWAVE ISOLATOR
3600 MHz - 4200 MHz RF/MICROWAVE ISOLATOR
5800 MHz - 7200 MHz RF/MICROWAVE ISOLATOR
4300 MHz - 5100 MHz RF/MICROWAVE ISOLATOR
17300 MHz - 19700 MHz RF/MICROWAVE ISOLATOR
|
FDK CORP
|
| R9G20215AS R9G20415AS R9G20615AS R9G20815AS R9G212 |
200V, 1500A fast recovery single diode
400V, 1500A fast recovery single diode
600V, 1500A fast recovery single diode
800V, 1500A fast recovery single diode
Fast Recovery Rectifier (1500 Amperes Average 3600 Volts)
|
Powerex Power Semiconductors
|
| EMH2602 |
3500 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device
|
SANYO SEMICONDUCTOR CO LTD
Sanyo Semicon Device
|
| 24M564J 22M364J 19M393J 22M304J |
1 ELEMENT, 5600 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 3600 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 390 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 3000 uH, GENERAL PURPOSE INDUCTOR
|
GOWANDA ELECTRONICS CORP
|
| UPA675T UPA675T-T1 UPA675T-T2 UPA675T-A |
100 mA, 16 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
N-channel enhancement type MOS FET
|
NEC
|
| FDS8958B |
30V Dual N & P-Channel PowerTrenchMOSFET
Dual N & P-Channel PowerTrench? MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ
Dual N & P-Channel PowerTrench垄莽 MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 m楼? Q2-P-Channel: -30 V, -4.5 A, 51 m楼?
|
Fairchild Semiconductor
|
|
