| PART |
Description |
Maker |
| E0C63P366 |
CMOS 4-Bit Low Voltage Singl Single Chip Microcomputer Composed of 4-Bit E0C63000 Core CPU，RAM,Rewritable ROM，Segment LCD Driver,On-Board Writing
|
爱普生（中国）有限公
|
| DSK9K1208U0A K9K1208U0A-YCB0 K9K1208U0A-YIB0 DS_K9 |
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
TV 16C 16#16 SKT RECP 6400 × 8位NAND闪存
64M x 8 Bit NAND Flash Memory Data Sheet
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| W25X16VSSIG W25X32VSSIG W25X64VSSIG W25X16VSFI W25 |
16M-BIT, 32M-BIT, AND 64M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI
|
Winbond
|
| MBM29LV651UE12TR MBM29LV651UE90TR MBM29LV651UE-12 |
64M (4M x 16) BIT 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
64M (4M x 16) BIT 64M号（4米16）位
AGM3224D equivalent, 320 x 240 pixel format 4M X 16 FLASH 3V PROM, 120 ns, PDSO48
DC-DC Converter; Supply Voltage:12V; Output Voltage:3.3V; Number of Outputs:1; Power Rating:20W; Mounting Type:PC Board; Series:WPN20R
320 x 240 pixel format, LED or CFL Backlight
|
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
Fujitsu Component Limit...
|
| IBM13N64734HCA |
64M x 72 Two-Bank Unbuffered SDRAM Module(64M x 64 2组不带缓冲同步动态RAM模块) 64米72双行缓冲内存模组4米64 2组不带缓冲同步动态内存模块）
|
International Business Machines, Corp.
|
| MB82DP04183C-65LWFKT |
64M Bit (4 M word × 16 bit) Mobile Phone Application Specific Memory
|
Fujitsu Component Limited.
|
| K9K1G16U0A |
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory 128M的8 64米16位NAND闪存
|
Samsung Semiconductor Co., Ltd.
|
| M2V64S20BTP-6 M2V64S20TP M2V64S30BTP-6 M2V64S30TP |
From old datasheet system
4-BANK x 2097152-WORD x 8-BIT
64M bit Synchronous DRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| UPD4664312-X UPD4664312F9-B65X-CR2 UPD4664312F9-BE |
64M-BIT CMOS MOBILE SPECIFIED RAM 4M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
|
NEC
|
| K9F1208U0A K9F1216U0A |
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
|
SAMSUNG[Samsung semiconductor]
|
| M390S6450BT1 |
64M x 72 SDRAM DIMM with PLL & Register based on 64M x 4, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Electronic
|
| K9K1208U0C K9K1208Q0C K9K1216D0C K9K1216Q0C K9K121 |
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
