| PART |
Description |
Maker |
| HY5S7B6LF-H HY5S7B6LF-S HY5S7B6LFP-H HY5S7B6LFP-S |
512MBit MOBILE SDR SDRAMs based on 8M x 4Bank x16I/O
|
Hynix Semiconductor
|
| HY5Y6B6DLFP-PF HY5Y6B6DLFP-HF |
Mobile SDR - 64Mb
|
Hynix Semiconductor
|
| HY5Y7A2DLM HY5Y7A2DLMP-HF |
Mobile SDR - 512Mb
|
Hynix Semiconductor
|
| MB82DBS16164A-80L |
256 Mbit Mobile FCRAM 1.8 V, SDR Burst Mode
|
Fujitsu Media Devices Limited
|
| K4S280432A-TC_L75 K4S280432A-TC_L80 K4S280432A-TC/ |
128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM米4位4银行同步DRAM LVTTL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| HY57V281620ALT-6 HY57V281620ALT-7 HY57V281620ALT-8 |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 143MHz
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 125MHz
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 166MHz
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 133MHz
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 100MHz
4 BANKS X 2M X 16BITS SYNCHRONOUS DRAM
|
HYNIX[Hynix Semiconductor]
|
| K4S281632C-TC1H K4S281632C-TC1L K4S281632C-TC75 K4 |
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| M65KA128AL |
Low Power SDRAMs
|
ST Microelectronics
|
| BD3531F-FE2 |
Termination Regulator for DDR-SDRAMs
|
ROHM
|
| HYS64T32X00HDL07 |
200 Pin Small-Outlined DDR2 SDRAMs Modules
|
Qimonda AG
|
| HYS64T32000HDL-2.5-B HYS64T128021HDL-2.5-B HYS64T3 |
200 Pin Small-Outlined DDR2 SDRAMs Modules
|
Qimonda AG
|
