| PART |
Description |
Maker |
| AS5SS256K18DQ-10_IT AS5SS256K18DQ-10_XT AS5SS256K1 |
256K x 18 SSRAM Synchronous Burst SRAM, Flow-Through
|
Austin Semiconductor
|
| WED9LC6816V1510BC WED9LC6816V1510BI WED9LC6816V151 |
256K X 32 SSRAM/ 4M X 32 SDRAM
|
White Electronic Designs
ETC
|
| WED9LC6416V2010BI WED9LC6416V2010BC WED9LC6416V201 |
128Kx32 SSRAM/4Mx32 SDRAM Array(128Kx32??????RAM??Mx32????ㄦ?RAM?靛?)
128Kx32 SSRAM/4Mx32 SDRAM Array(128Kx32同步静态RAM4Mx32同步动态RAM阵列) 128Kx32 SSRAM/4Mx32内存阵列28Kx32同步静态内存和4Mx32同步动态内存阵列）
128Kx32 SSRAM/4Mx32 SDRAM 128Kx32 SSRAM/4Mx32内存
128Kx32 SSRAM/4Mx32 SDRAM Array(128Kx32同步静态RAMB>4Mx32同步动态RAM阵列)
|
White Electronic Designs Corporation
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
|
| IDT71V2548S133PF IDT71V2548S133BGI IDT71V2548SA133 |
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 4.2 ns, PBGA165
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K的3656 × 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 18 ZBT SRAM, 3.8 ns, PBGA165
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 18 ZBT SRAM, 3.8 ns, PQFP100
25V N-Channel PowerTrench MOSFET; Package: TO-251(IPAK); No of Pins: 3; Container: Rail 128K的3656 × 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 5 ns, PBGA165
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K的36256 × 18 3.3同步ZBT SRAM2.5VI / O的脉冲计数器输出流水
128K x 36/ 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O/ Burst Counter Pipelined Outputs
3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/2.5V I/O
3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 2.5V I/O
|
Integrated Device Technology, Inc.
IDT
|
| AS7C3256PFD18A-4TQC AS7C3256PFD16A-4TQC AS7C3256PF |
3.3V 256K x 16 pipeline burst synchronous SRAM, 150 MHz
3.3V 256K x 16 pipeline burst synchronous SRAM, 100 MHz
256K X 18 STANDARD SRAM, 4 ns, PQFP100 14 X 20 MM, TQFP-100
256K X 16 STANDARD SRAM, 4 ns, PQFP100 14 X 20 MM, TQFP-100
3.3V 256K x 16/18 pipeline burst synchronous SRAM
3.3V 256K x 18 pipeline burst synchronous SRAM, 166 MHz
3.3V 256K x 18 pipeline burst synchronous SRAM, 150 MHz
3.3V 256K x 18 pipeline burst synchronous SRAM, 133 MHz
3.3V 256K x 18 pipeline burst synchronous SRAM, 100 MHz
3.3V 256K x 16 pipeline burst synchronous SRAM, 133 MHz
3.3V 256K x 16 pipeline burst synchronous SRAM, 166MHz
|
Alliance Semiconductor, Corp.
|
| IDT71V2558SA133BG IDT71V2558SA133BGI IDT71V2558SA1 |
3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 2.5V I/O
3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/2.5V I/O
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 3.2 ns, PBGA165
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 18 ZBT SRAM, 5 ns, PBGA165
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K的3656 × 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 4.2 ns, PBGA165
SPLICE,TERM,BUTT,INSUL,UNION,16-22AWG
|
IDT
Integrated Device Technology, Inc.
|
| IDT71V3559S85BG IDT71V3559S75BG IDT71V3559S75BG8 I |
3.3V 256K x 18 ZBT Synchronous Flow-Through SRAM w/3.3V I/O
128K x 36, 256K x 18, 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter, Flow-Through Outputs
|
IDT
Integrated Device Technology
|
| TC55VD836FF-150 TC55VD836FF-133 TC55VD836FF-143 |
256K Word x 36 Bit Synchronous No-turnround Static RAM(256K 字x36位同步无转向静RAM) 256K字36位同步无具体时间的静态RAM56K字x36位同步无转向静态内存）
|
Toshiba Corporation
Toshiba, Corp.
|
| HM62G18256 |
4M Synchronous Fast Static RAM (256k-words ×18-bits)(4M同步快速静态RAM(256k×18) 4分同步快速静态存储器56k -字18位）分同步快速静态随机存储器56k字18位）
|
Hitachi,Ltd.
|
| CY7C0853V-133BBXI CY7C0852AV-167AXC CY7C0851AV-133 |
FLEx36TM 3.3V 32K/64K/128K/256K x 36 Synchronous Dual-Port RAM; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.0 to 3.6 V; Speed: 133 MHz 256K X 36 DUAL-PORT SRAM, 4.7 ns, PBGA172
FLEx36™ 3.3V 32K/64K/128K/256K x 36 Synchronous Dual-Port RAM 128K X 36 DUAL-PORT SRAM, 4 ns, PQFP176
FLEx36™ 3.3V 32K/64K/128K/256K x 36 Synchronous Dual-Port RAM 64K X 36 DUAL-PORT SRAM, 4 ns, PQFP176
FLEx36™ 3.3V 32K/64K/128K/256K x 36 Synchronous Dual-Port RAM 256K X 36 DUAL-PORT SRAM, 4.7 ns, PBGA172
|
Cypress Semiconductor, Corp.
|
| GS88136AD-225 GS88136AT-250I GS88136AD-250I |
512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs 256K X 36 CACHE SRAM, 6 ns, PBGA165
512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs 256K X 36 CACHE SRAM, 5.5 ns, PQFP100
512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs 256K X 36 CACHE SRAM, 5.5 ns, PBGA165
|
GSI Technology, Inc.
|
| IDT71V2577YS75BQI IDT71V2577YS75BGI IDT71V2579S85B |
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 128K X 36 CACHE SRAM, 8 ns, PQFP100
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 128K的x 36256亩18 3.3同步SRAM.5VI / O的流量通过输出脉冲计数器，单周期取
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 128K X 36 CACHE SRAM, 8.5 ns, PQFP100
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 128K X 36 CACHE SRAM, 7.5 ns, PQFP100
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 128K X 36 CACHE SRAM, 7.5 ns, PBGA119
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 256K X 18 CACHE SRAM, 7.5 ns, PBGA119
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 256K X 18 CACHE SRAM, 8 ns, PBGA165
|
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
|
|
