| PART |
Description |
Maker |
| UPC3227TB-E3 UPC3227TB-E3-A |
5 V, SILICON GERMANIUM MMIC WIDEBAND AMPLIFIER
|
NEC
|
| BGU7003 |
Wideband Silicon Germanium Low-noise Amplifier MMIC
|
Philips Semiconductors
|
| BGA61608 |
Silicon Germanium Broadband MMIC Amplifier
Silicon Germanium Broadband MMIC Amplifier
|
Infineon Technologies AG
Infineon Technologies A...
|
| BGA614 |
Silicon MMICs - SiGe 0...5GHz, 15dB Broadband Amplifier, Pout = 12dBm, SOT343
Silicon Germanium Broadband MMIC Amplifier
|
INFINEON[Infineon Technologies AG]
|
| BGA612 |
Silicon MMICs - SiGe 0...5GHz, 15dB Broadband Amplifier, Pout = 8dBm, SOT343
Silicon Germanium Broadband MMIC Amplifier
|
INFINEON[Infineon Technologies AG]
|
| BGA61208 |
Silicon Germanium Broadband MMIC Amplifier
0 MHz - 2800 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
Infineon Technologies AG
|
| 1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
12 V, 500 mA, gold bonded germanium diode
90 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION)
75 V, 500 mA, gold bonded germanium diode
120 V, 500 mA, gold bonded germanium diode
70 V, 500 mA, gold bonded germanium diode
80 V, 500 mA, gold bonded germanium diode
115 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
ETC[ETC]
|
| 1N55 1N64 1N73 1N107 1N273 1N277 1N279 1N281 1N289 |
1N55
1N64
1N73
1N3082
1N3865
1W569 1W634
AA112 AA113 AA117 AA118 AA119
DR213
HG5007 HG50089
T7G T17G T19G
GERMANIUM DOIDES
GERMANIUM DOIDES
GERMANIUM DIODES
|
American Microsemiconductor Inc.
American Microsemicondu...
American Accurate Compo...
|
| BF776 |
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
| BFR720L3RH |
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
| BFU730F |
wideband silicon germanium RF transistor
|
NXP Semiconductors
|
