| PART |
Description |
Maker |
| R2J20651ANP |
Integrated Driver - MOS FET (DrMOS)
|
Renesas Electronics Corporation
|
| R2J20655BNP |
Integrated Driver - MOS FET (DrMOS)
|
Renesas Electronics Corporation
|
| R2J20604NPG3 R2J20604NP-G3 R2J20604NP10 R2J20604NP |
Integrated Driver - MOS FET (DrMOS)
40 A HALF BRDG BASED MOSFET DRIVER, PQCC56 8 X 8 MM, 0.95 MM HEIGHT, 0.50 MM PITCH, LEAD FREE AND HALOGEN FREE, PLASTIC, QFN-56
|
Renesas Electronics Corporation
|
| 2SK1959 2SK1959-T1 |
N Channel enhancement MOS FET
MOS Field Effect Transistor
N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
| 2SK2414 2SK2414-Z 2SK2414-Z-T1 2SK2414-Z-E1 2SK241 |
Switching N-channel power MOS FET industrial use N沟道 开关功率场效应晶体工业
Low withstand voltage Nch MOS FET
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| 2SK1215 2SK1215D |
Silicon N-Channel MOS FET
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
Silicon N Channel MOS FETs
|
HITACHI[Hitachi Semiconductor]
|
| TD62M4503AFN E005721 |
POWER MOS FET 4CH SINK DRIVER
From old datasheet system
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| MIC3223 MIC3223YTSE |
High Power Boost LED Driver with Integrated FET
|
Micrel Semiconductor
|
| UPA1724 UPA1724G PA1724 UPA1724G-E1 UPA1724G-E2 |
N-channel enhancement type power MOS FET
MOS Field Effect Transistor
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
10 A, 20 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NEC[NEC]
|
| 2SK360E 2SK360 |
Silicon N Channel MOS FET
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
|
Hitachi Semiconductor
|
