| PART |
Description |
Maker |
| HYS72D64320GBR-7-B |
184 - Pin Registered Double Data Rate SDRAM Modules
|
http://
|
| NT256D64S88B1G NT512D64S8HB0G NT512D64S8HB0G-75B N |
184 pin Unbuffered DDR DIMM
|
ETC[ETC]
|
| HYS64D32300HU-6-C HYS72D64320HU-6-C HYS72D64320HU- |
184-Pin Unbuffered Dual-In-Line Memory Modules
|
Infineon Technologies A...
|
| HYS72D64320HU-6-C HYS64D16301HU-5-C HYS64D16301HU- |
DDR SDRAM Modules - 256MB (32Mx64) PC2700 1-bank
184-Pin Unbuffered Dual-In-Line Memory Modules
|
INFINEON[Infineon Technologies AG]
|
| HYMD232646DP8-H HYMD232726DP8-H HYMD264726DP8-H HY |
1184pin Unbuffered DDR SDRAM DIMMs
32M X 8 DDR DRAM MODULE, 0.7 ns, DMA184 DIMM-184
32M X 8 DDR DRAM MODULE, 0.7 ns, DMA184 ROHS COMPLIANT, DIMM-184
16M X 16 DDR DRAM MODULE, 0.7 ns, DMA184
|
Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
|
| 3TB41-15 |
TB Series Basic Switch, Double Pole Double Throw Double Break Circuitry, 10 A at 250 Vac, Pin Plunger Actuator, Silver Contacts, Screw Termination
|
Honeywell
|
| M470L3324DU0-LB0 M470L2923DV0-LB0 M470L2923DV0-LB3 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant) DDR SDRAM的缓冲模8 4针缓冲模块的512MBD为基础的模6 TSOP-II
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant) DDR SDRAM的缓冲模18 4针缓冲模块的512MB的D为基础的模6 TSOP-II
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| M470L6524C M470L6524CU0-LCC M470L3324CU0-CA2 M470L |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb C-die DDR SDRAM的缓冲模8 4针缓冲模块的基于C12Mb芯片
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| KVR400X64C3A KVR400X64C3A512 |
512MB 64M x 64-Bit DDR400 CL3 184-Pin DIMM
|
Electronic Theatre Controls, Inc.
|
| MH16D72AKLB-10 MH16D72AKLB-75 |
1 /207.959 /552-BIT (16 /777 /216-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module
JT 41C 41#20 PIN GRND PLUG
|
Mitsubishi Electric Corporation
|
