| PART |
Description |
Maker |
| UPA675T UPA675T-T1 UPA675T-T2 UPA675T-A |
100 mA, 16 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
N-channel enhancement type MOS FET
|
NEC
|
| SSM6E01TU |
Multi-Chip Device Silicon P-Channel MOS Type (U-MOS II) N-Channel MOS Type (Planer) Load Switch Applications
|
TOSHIBA[Toshiba Semiconductor]
|
| UPA1950 UPA1950TE UPA1950TE-T2 UPA1950TE-T1 |
2.5 A, 12 V, 0.205 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Pch enhancement-type MOS FET
|
NEC[NEC]
|
| UPA1807 UPA1807GR-9JG UPA1807GR-9JG-E1 UPA1807GR-9 |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 12A I(D) | SO
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
N Channel enhancement MOS FET
|
NEC Corp.
NEC[NEC]
|
| BSS192 |
P-channel vertical D-MOS intermediate level FET P沟道垂直 D-MOS 中间级场效应
N-channel TrenchMOS TM transistor
|
NXP Semiconductors N.V.
Philips
|
| UPA1806GR-9JG UPA1806 UPA1806GR-9JG-E1 UPA1806GR-9 |
CONNECTOR ACCESSORY
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
N Channel enhancement MOS FET
|
NEC Corp.
|
| UPA1809 UPA1809GR-9JG UPA1809GR-9JG-E1 UPA1809GR-9 |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING N沟道MOS场效应晶体管开
N Channel enhancement MOS FET
|
NEC, Corp.
NEC Corp.
|
| UPA678TB |
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
P-Channel enhancement MOS FET for load sw
|
NEC Corp.
|
| UPA1872 UPA1872GR-9JG UPA1872GR-9JG-E1 UPA1872GR-9 |
N-channel enhancement type MOS FET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC[NEC]
|
| UPA1870B UPA1870BGR-9JG UPA1870BGR-9JG-E1 UPA1870B |
N-channel enhancement type MOS FET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC[NEC]
NEC Corp.
|
| 2SK2487 2SK2487-A |
8 A, 900 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET
MOS Field Effect Transistor
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
| TPC8407 |
MOSFETs Silicon P-/N-Channel MOS (U-MOS/U-MOS-H)
|
Toshiba Semiconductor
|
